Abstract:Short-circuit faults are the most critical failure mechanism in power converters. Among the various short-circuit protection schemes, desaturation protection is the most mature and widely used solution. Due to the lack of gate driver integrated circuit (IC) with desaturation protection for the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), the conventional insulated gate bipolar transistor (IGBT) driver IC is normally used as these two devices have similar gate structure and driving mechanism. In this work, a gate driver with desaturation protection is designed for the 1.2-kV/30-A SiC MOSFET and silicon (Si) IGBT with the off-the-shelf driver IC. To further limit voltage-overshoot at the rapid turn-off transient, the active clamping circuit is introduced. Based on the experiments of switching characterization and short-circuit test, the SiC MOSFET shows faster switching speed, more serious electromagnetic interference (EMI) issue, lower switching loss (half), and higher short-circuit current (1.6 times) than the Si IGBT, even with a slower gate driver. Thus, a rapid response speed is required for the desaturation protection circuit of SiC MOSFET. Due to the long delay time of the existing desaturation protection scheme, it is technically difficult to design a sub- μ s protection circuit. In this work, an external current source is proposed to charge the blanking capacitor. A short-circuit time of 0.91 μ s is achieved with a reliable protection. Additionally, the peak current is reduced by 22%.

Gate drive investigations of IGBT modules with SiC-Schottky freewheeling diodes

Turn-on Oscillation Damping for Hybrid IGBT Modules

A Novel Single Power-Supply IGBT Driver Circuit

Dynamic Performance of 6.5kv/400a SiC MOSFET Module and Its Gate Driver

A voltage controlled current source gate drive method for IGBT devices

Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs

An Active Gate Driver Design to Reduce Voltage and Current Overshoots for SiC MOSFET Modules

SiC MOSFET Driver and Experiment Analysis

An Advanced Self-Regulating Gate Driver for IGBTs

A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module

Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs

Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module

Design and Optimization of High Performance Gate Driver for Medium-Voltage SiC Power Modules

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

Gate Driver Design for SiC Power MOSFETs with a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

A Self-Regulating Gate Driver for High-Power IGBTs

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

Active Current Source IGBT Gate Drive with Closed-Loop Di/dt and Dv/dt Control

Switching Noise Suppression for Hybrid Igbt Modules

A Novel Active Gate Driver with Auxiliary Gate Current Control Circuit for Improving Switching Performance of High-Power SiC MOSFET Modules