Abstract:Short-circuit faults are the most critical failure mechanism in power converters. Among the various short-circuit protection schemes, desaturation protection is the most mature and widely used solution. Due to the lack of gate driver integrated circuit (IC) with desaturation protection for the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), the conventional insulated gate bipolar transistor (IGBT) driver IC is normally used as these two devices have similar gate structure and driving mechanism. In this work, a gate driver with desaturation protection is designed for the 1.2-kV/30-A SiC MOSFET and silicon (Si) IGBT with the off-the-shelf driver IC. To further limit voltage-overshoot at the rapid turn-off transient, the active clamping circuit is introduced. Based on the experiments of switching characterization and short-circuit test, the SiC MOSFET shows faster switching speed, more serious electromagnetic interference (EMI) issue, lower switching loss (half), and higher short-circuit current (1.6 times) than the Si IGBT, even with a slower gate driver. Thus, a rapid response speed is required for the desaturation protection circuit of SiC MOSFET. Due to the long delay time of the existing desaturation protection scheme, it is technically difficult to design a sub- μ s protection circuit. In this work, an external current source is proposed to charge the blanking capacitor. A short-circuit time of 0.91 μ s is achieved with a reliable protection. Additionally, the peak current is reduced by 22%.

Gate Driver Design for SiC Power MOSFETs with a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs

An Active Gate Driver Design to Reduce Voltage and Current Overshoots for SiC MOSFET Modules

An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique

Protecting SiC JFET from Gate Overstress in GaN/SiC Cascode Device without Compromising Switching Performance

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

Comparison of Two Gate Drivers for SiC MOSFETs on Switching Performance and over Current Protection

Smart Self-Driving Crosstalk Suppression Gate Driver for SiC MOSFETs Based on Level Shifter

Design and Optimization of High Performance Gate Driver for Medium-Voltage SiC Power Modules

A Multi-level Self-Driving Gate Driver of SiC MOSFET for Crosstalk Suppression Considering Common-Source Inductance

A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory

Open-Loop Gate Control for Optimizing the Turn-ON Transition of SiC MOSFETs

Design and Evaluation of a High Performance Silicon Carbide MOSFET Driver

Monolithic Integration of Gate Driver and Protection Modules with P-GaN Gate Power HEMTs

A Cost-Effective Series-Connected Gate Drive Circuit for SiC MOSFET

A Novel Active Gate Driver with Auxiliary Gate Current Control Circuit for Improving Switching Performance of High-Power SiC MOSFET Modules

An Active Gate Driver for Suppressing the Current Oscillation of SiC MOSFET

Design Techniques of Gate Driver for SiC MOSFET's Applications.

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

Active Gate Drive Circuit with Auxiliary Drive Branch for SiC MOSFET