Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Electrothermal Analysis of a Double-side Cooling Power Module with Large-area SiC MOSFETs

Heat spreading performance of SiC-based power module with bonded vapour chamber for electric powertrain integration

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module

Comparison of 1700-V SiC-MOSFET and Si-IGBT Modules Under Identical Test Setup Conditions

Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally Efficient Thermal-Profile Prediction

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications

Investigation of Low-Profile, High-Performance 62-mm SiC Power Module Package

Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module

A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Direct Integration of Optimized Phase-Change Heat Spreaders Into SiC Power Module for Thermal Performance Improvements Under High Heat Flux

Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications