Abstract:Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for their superior characteristics. Despite advances in 1.2kV SiC MOSFET generations, a comprehensive comparative analysis of different device types remains limited. This study examines the short-circuit (SC) behavior of 1.2kV SiC MOSFETs across multiple vendors and generations, including planar and trench structures. Key metrics such as Short Circuit Withstand Time (SCWT), SC energy, SC peak power, SC energy density, and SC current density were evaluated at DC bus voltages of 400V, 600V, and 800V. Our findings reveal that third-generation (3G) devices exhibit inferior SC performance due to smaller die areas that impede heat dissipation, with 800V survival times as low as 2.25 μs for GeneSiC-3G. In contrast, trench-based designs showed improved resilience. Infineon-1G, with an active area 44.3% smaller than Littelfuse-1G and 45% smaller than CREE-2G, achieved comparable SCWT (4.5 μs vs. 4.5 μs for Littelfuse and 4 μs for CREE-2G) while demonstrating superior thermal management, with a SC energy density of 0.096 J/mm² and current density of 41.74 A/mm² at 800V. Similarly, another trench device, Rohm-3G, outperformed planar 3G devices, with a SCWT of 3.5 μs and peak power of 110 kW at 800V. Post-SC failure mechanisms were systematically analyzed using optical microscopy, Lock-In Thermal Emission Microscopy (LITEM), and Focused Ion Beam (FIB), revealing gate leakage paths and damage in the active regions and two-finger area. These findings offer significant insights into the trade-offs between on-state performance and SC robustness, providing manufacturers and designers with crucial guidance for developing optimized SiC MOSFET designs for high-power applications.

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

Comparative Study on Reliability and Application Features of SiC MOSFET

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Electrical Characterization of 1.2kv SiC MOSFET at Extremely High Junction Temperature

Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs

Short-Circuit Characterization and Protection of 10-kV SiC mosfet

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Short Circuit Capability and Short Circuit Induced $v_{\mathrm{th}}$ Instability of a 1.2-Kv SiC Power MOSFET

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance