Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Comparative Study on Reliability and Application Features of SiC MOSFET

The Investigation of 1200V SiC MOSFET Radiation Ruggedness with Different Channel Lengths

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Investigation of 1200 V SiC MOSFETs' Surge Reliability.

Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs

Determination of Failure Degree of 1.2 Kv SiC MOSFETs after Short-Circuit Test Using an Improved Test Setup

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs

Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs