Abstract:In this article, short-circuit capability prediction and failure mode of 1200-V-class SiC MOSFETs with a double and asymmetric trench structure are proposed under single-pulse short-circuit stress. A short-circuit prediction model is established to evaluate short-circuit withstand time and corresponding critical energy of devices under various dc bus voltages. This model can provide quick predictive guidance even if there are few test results, and the predicted values are consistent with practical values. Furthermore, two failure modes are investigated in a short-circuit test. For asymmetric trench SiC MOSFETs, failure modes are gate damage at lower dc bus voltages and thermal runaway at higher dc bus voltages; whereas failure mode for double trench SiC MOSFETs is thermal runaway at all dc bus voltages. In addition, the internal thermal-electro stress of the device is analyzed until it fails during short-circuit condition, and proves that failure mode depends on the dc bus voltage and peak short-circuit current of the device. Finally, the top view of failed devices confirms the two failure modes of trench SiC MOSFETs by the postdecapsulation.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to evaluate and predict the short - circuit capability and failure modes of 1200V SiC MOSFETs with asymmetric trench structures and double - trench structures under single - pulse short - circuit stress. Specifically, the paper aims to: 1. **Establish a short - circuit prediction model**: In order to evaluate the short - circuit withstand time and the corresponding critical energy of the device under different DC bus voltages, a short - circuit prediction model is established. This model can provide rapid prediction guidance when the test data is limited, and the predicted values are basically consistent with the actual values. 2. **Study failure modes**: Through short - circuit tests, the failure modes of two types of SiC MOSFETs (asymmetric trench and double - trench) under different DC bus voltages are explored. For the asymmetric trench SiC MOSFET, gate damage occurs at lower DC bus voltages, and thermal runaway occurs at higher DC bus voltages; for the double - trench SiC MOSFET, thermal runaway occurs at all DC bus voltages. 3. **Analyze internal thermo - electric stress**: Through finite - element simulation, the internal thermo - electric stress of the device under short - circuit conditions is analyzed, revealing that the failure mode depends on the DC bus voltage and the peak short - circuit current, and how these factors affect the power dissipation density and the internal temperature. ### Specific problem summary - **Short - circuit capability evaluation**: By predicting the short - circuit withstand time and critical energy under different DC bus voltages, it helps engineers select appropriate devices in system design. - **Failure mode identification**: The main failure mechanisms of SiC MOSFETs with different structures under short - circuit conditions are clarified, which is helpful for improving the device design and reliability. - **Thermo - electric stress analysis**: Through simulation analysis, it provides an understanding of the internal heat distribution and current density changes of the device, and explains the reasons for different failure modes. ### Key formulas Formula for short - circuit energy dissipation: \[ E_{sc} = \int_0^{t_{sc}} V_{ds} I_{ds} dt \] Relationship between short - circuit withstand time and critical energy: \[ E_{scc} = at_{scw} + b \] Key equation in the prediction model: \[ t_{scw} = \frac{BV_{ds} - 1}{A - CV_{ds}} \] where \( t_{scw} \) is the short - circuit withstand time, \( E_{scc} \) is the short - circuit critical energy, \( V_{ds} \) is the drain - source voltage, and \( A, B, C \) are constants obtained by fitting experimental data. ### Conclusion Through experiments and finite - element analysis, the paper establishes a reliable short - circuit prediction model and reveals the failure modes of SiC MOSFETs with different structures and their characteristics depending on the DC bus voltage and the peak short - circuit current. These findings provide an important basis for improving the reliability of SiC MOSFETs and optimizing their applications.

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