A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults

Yifan Wu,Chi Li,Zedong Zheng,Lianzhong Wang,Wenxian Zhao,Qifeng Zou

DOI: https://doi.org/10.3390/electronics13050996

IF: 2.9

2024-03-07

Electronics

Abstract:Accurate fault simulation and failure prediction have long been challenges for SiC MOSFETs users. This paper presents a behavior model of Silicon Carbide (SiC) double-implanted MOSFET (DMOSFET), considering thermal-runaway failures in short-circuit and avalanche breakdown faults on the basis of cell-level physical processes. The proposed model can simulate the faults with extremely high accuracy and precisely predict SiC DMOSFET's short-circuit withstand time and critical avalanche energy. By finite-element simulations, cell-level physical processes of short-circuit and avalanche breakdown faults are clarified. The mechanisms of thermal-runaway failures are deeply discussed with references to existing studies. Based on semiconductor and device physics mechanisms, the proposed model is constructed upon a traditional behavior model of SiC MOSFET with several parallel branches that are proposed to describe the thermal-runaway failures during both faults. The Cauer thermal network model is used for estimating junction temperature within it. The proposed model is constructed in Simulink, and it is validated using short-circuit and unclamped inductive switching (UIS) tests.

engineering, electrical & electronic,computer science, information systems,physics, applied

What problem does this paper attempt to address?

The problem this paper attempts to address is the inadequacy of existing behavior models for silicon carbide (SiC) double-diffused metal-oxide-semiconductor field-effect transistors (DMOSFETs) in describing short-circuit and avalanche breakdown failures, particularly in simulating thermal runaway failures. These issues include:

1. **Limited model coverage**: Existing models mostly focus on short-circuit failures without simultaneously considering avalanche breakdown failures.
2. **Weak physical foundation**: Many models lack a solid physical foundation, which may affect the generality and accuracy of the models.
3. **Inability to describe failure phenomena during faults**: Existing models struggle to accurately describe thermal runaway failure phenomena during short-circuit and avalanche breakdown failures.

To overcome these shortcomings, this paper proposes a new behavior model based on cell-level physical processes that can simultaneously describe thermal runaway failure phenomena in both short-circuit and avalanche breakdown failures. With this model, researchers and engineers can more accurately simulate failures, predict the short-circuit withstand time and critical avalanche energy of SiC DMOSFETs, thereby improving the reliability of devices and the effectiveness of protection circuit designs.