Abstract:In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors under repetitive avalanche shocks are investigated in details. With the help of Silvaco TCAD simulations, gate capacitance versus gate voltage (C-g-V-g) measurement, and three-terminal charge pumping test, the main damaged position is demonstrated to be the SiC/SiO2 interface along junction FET (JFET) region instead of the body diode where most of the avalanche current passes through. Dominant avalanche degradation mechanism is then confirmed to be the injection of holes into the gate oxide above the JFET region. Since the channel region and the main junction of body diode are not seriously damaged by the avalanche stress, static parameters all remain stable. Meanwhile, due to the injection of holes, the depletion layer beneath the JFET region gets thinner, resulting in the increase of gate-drain capacitance (C-gd) under low drain-source voltage (V-ds) bias condition. It further takes responsibilities for the increments in input capacitance (C-iss), output capacitance (C-oss), and reverse transfer capacitance (C-rss). Moreover, it results in the extension of Miller plateau. Therefore, the increase of gate charge and delay of turn-OFF time after being stressed by repetitive avalanche shocks are monitored. Moreover, turn-ON and turn-OFF dissipated energies after different unclamped-inductive-switching stress cycles are extracted. They are rarely influenced by the stress for the overlapping areas of voltage and current during switching procedures are relatively stable.

A Behavior Model of Planar SiC MOSFET Considering Avalanche Breakdown

A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Investigation on SiC MOSFET’s Avalanche and Short-Circuit Failure Mechanism

A Method To Model Mosfet'S Second Breakdown Action For Circuit-Level Esd Simulation

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS

A Simulator for Investigation of Breakdown Characteristics of SiC MOSFETs

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET

Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs

Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions

Review of Avalanche Tolerance of Silicon Carbide Power MOSFETs

Investigation on Single Pulse Avalanche Failure of 1200V SiC MOSFETs at Different Temperatures

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

Experimental Investigation of the Single Pulse Avalanche Ruggedness of SiC Power MOSFETs

A Junction Temperature-based PSpice Short-circuit Model of SiC MOSFET Considering Leakage Current