Abstract:With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of L, and C-gd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via State-flow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Analytical Modeling of SiC MOSFET During Switching Transient

Analytical Modeling of the Silicon Carbide (sic) MOSFET During Switching Transition for EMI Investigation

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET with Improved Accuracy and Convergence Capability

A Novel Compact Model of Gate Capacitance for SiC MOSFET with Easy Parameter Extraction Method

Analytical Modeling Of Switching Characteristics Of The Sic Mosfet Based On Finite State Machine

An Analytical SiC MOSFET Switching Behavior Model Considering Parasitic Inductance and Temperature Effect

An Improved Drain-source Capacitance Characterization Method for SiC MOSFET Switching Performance Prediction

Modelling of SiC MOSFET Power Devices Incorporating Physical Effects

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

Accurate Switching Behavior Modeling for SiC MOSFETs Considering Dynamic Output Characteristics

Nonlinear Capacitance Modeling of Radio Frequency MOSFETs Based on the Statz Model

Improved SiC MOSFET Model Considering Channel Dynamics of Transfer Characteristics

An analytical subthreshold I-V model of SiC MOSFETs

A Semi-Physical Model of SiC MOSFETs for Improved Static Characteristic

An Accurate Analytical Model of SiC MOSFETs for Switching Speed and Switching Loss Calculation in High-Voltage Pulsed Power Supplies

Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

Modeling of Sic Mosfet in Matlab/Simulink

Study on the Effect of External Drain-Source Capacitance on the Turn-On Switching Characteristics of SiC MOSFET Using an Analytical Model