Abstract:Accurate switching loss prediction is crucial for studying the failure mechanisms of power modules at extremely high temperatures. However, the temperature range of existing loss models for SiC MOSFETs is below 175°C, which cannot fulfill the requirements of high-temperature applications. This study proposes an analytical switching loss model for SiC MOSFETs over an extremely wide temperature range of 25 to 475°C. First, the proposed device-level model improves accuracy by considering the temperature-dependent channel transfer and output characteristics, body diode forward characteristic, and focusing on the two main charge storage effects of the reverse recovery process. Importantly, new phenomena in device characteristics at high temperatures are considered, especially the sudden increase phenomenon in reverse recovery, thereby broadening the applicable temperature range of the model. Additionally, the proposed circuit-level model is based on the commonly used four-lead Kelvin source connection case in conventional hightemperature packages and includes almost all parasitic inductances and capacitances. In this study, a low-inductance doubleside embedded package structure with a temperature resistance of 550°C is used to develop a high-temperature double-pulse test platform to verify the accuracy of the model. Experimental results show that the average estimation error of the turn-on energy loss is less than 8% and the maximum estimation error of the total energy loss is less than 14%. The proposed model holds the potential to be a powerful tool for studying extremely hightemperature failure mechanisms of power modules and guides the design of high-temperature converters.

Modeling of SiC MOSFET with temperature dependent parameters and its applications

Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

A Non-Segmented PSpice Model of SiC MOSFET with Temperature-Dependent Parameters

An Improved Equivalent Circuit Model of SiC MOSFET and Its Switching Behavior Predicting Method

A Temperature-Dependent Pspice Short-Circuit Model Of Sic Mosfet

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

A Junction Temperature-based PSpice Short-circuit Model of SiC MOSFET Considering Leakage Current

An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery over an Extremely Wide High-Temperature Range

Modeling of Sic Mosfet in Matlab/Simulink

Analytical PSpice model for SiC MOSFET based high power modules

Switching Losses Model of SiC MOSFET

Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs

A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET with Improved Accuracy and Convergence Capability

A Semiphysical Semibehavioral Analytical Model for Switching Transient Process of SiC MOSFET Module

Characterization and Modeling of a 1.2-kV 30-A Silicon-Carbide MOSFET

Accurate Time-segmented Loss Model for SiC MOSFETs in Electro-thermal Multi-Rate Simulation

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

Piecewise Fitting Based Characteristics Analysis and Modeling for Converters with of SiC MOSFET

Mechanism Segmentation Transient Model of SiC MOSFETs for Multi-rate Electro-thermal Simulation

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver