Abstract:Ten-kilovolt SiC MOSFETs are currently under development by a number of organizations in the United States, with the aim of enabling their applications in high-voltage high-frequency power conversions. The aim of this paper is to obtain the key device characteristics of SiC MOSFETs so that their realistic application prospect can be provided. In particular, the emphasis is on obtaining their losses in various operation conditions from the extensive characterization study and a proposed behavioral SPICE model. Using the validated MOSFET SPICE model, a 20-kHz 370-W dc/dc boost converter based on a 10-kV 4H-SiC DMOSFET and diodes is designed and experimentally demonstrated. In the steady state of the boost converter, the total power loss in the 15.45-$\hbox{mm}^{2}$ SiC MOSFET is 23.6 W for the input power of 428 W. The characterization study of the experimental SiC MOSFET and the experiment of the SiC MOSFET-based boost converter indicate that the turn-on losses of SiC MOSFETs are the dominant factors in determining their maximum operation frequency in hard-switched circuits with conventional thermal management. Replacing a 10-kV SiC PiN diode with a 10-kV SiC JBS diode as a boost diode and using a small external gate resistor, the turn-on loss of the SiC MOSFET can be reduced, and the 10-kV 5-A SiC MOSFET-based boost converter is predicted to be capable of a 20-kHz operation with a 5-kV dc output voltage and a 1.25-kW output power by the PSpice simulation with the MOSFET model. The low losses and fast switching speed of 10-kV SiC MOSFETs shown in the characterization study and the preliminary demonstration of the boost converter make them attractive in high-frequency high-voltage power-conversion applications.

Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

Modeling of SiC MOSFET with temperature dependent parameters and its applications

A Non-Segmented PSpice Model of SiC MOSFET with Temperature-Dependent Parameters

An Improved Equivalent Circuit Model of SiC MOSFET and Its Switching Behavior Predicting Method

An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery over an Extremely Wide High-Temperature Range

Characterization and Modeling of a 1.2-kV 30-A Silicon-Carbide MOSFET

Analytical PSpice model for SiC MOSFET based high power modules

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

A Temperature-Dependent Pspice Short-Circuit Model Of Sic Mosfet

Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs

A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET with Improved Accuracy and Convergence Capability

A Junction Temperature-based PSpice Short-circuit Model of SiC MOSFET Considering Leakage Current

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

A Low-Cost High-Performance Voltage Sensing Circuit with Proactive Parameter Design Compensation Network for SiC MOSFETs.

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation

Characterization, Modeling, and Application of 10-kV SiC MOSFET

An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

A Semiphysical Semibehavioral Analytical Model for Switching Transient Process of SiC MOSFET Module