Abstract:The superior electrical and thermal characteristics of silicon carbide (SiC) MOSFETs bring major challenges to its short-circuit reliability. To fully understand its short-circuit mechanism, estimate its safe operating area, and provide guidance for circuit design, it is crucial to establish a theoretical model to quantize the relationship between circuit parameters and short-circuit behavior of SiC MOSFETs. A temperature-dependent analytical model considering the parasitic inductances, nonlinear junction capacitances, and temperature dependence of the channel current is proposed in this article, which uses only the parameters in the datasheet or provided by manufacturers. The proposed model is established based on the analysis for each short-circuit stage in both single-device configuration and half-bridge configuration, and the quantitatively analytical results of the transient short-circuit waveforms, energy loss, and junction temperature rise can be calculated by solving the model. The accuracy of the analytical model is verified by comparing the analytical results with the experimental results. Furthermore, the effects of varied parameters on the short-circuit behavior are evaluated by the proposed analytical model. And the corresponding circuit design guidance for higher short-circuit reliability is given.

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Modeling of SiC MOSFET with temperature dependent parameters and its applications

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Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally Efficient Thermal-Profile Prediction

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

Analysis of basic performance parameters and temperature effect of SiC-MOSFET

A Non-Segmented PSpice Model of SiC MOSFET with Temperature-Dependent Parameters

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A detailed simulation study of the performance of -silicon carbide MOSFETs and a comparison with their silicon counterparts

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Analytical model for the drain and gate currents in silicon nanowire and nanosheet MOS transistors valid between 300 and 500 K

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Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

A Physical-Based 3Rd-Quadrant Behavioral Model for Power SiC MOSFET