Abstract:In this article, we delve into the reliability of various oxide/4H-SiC interfaces when exposed to elevated temperatures and carrier-trapping conditions. Our investigation primarily centers around the impact of different gate dielectric materials on the electrical characteristics of a low breakdown 4H-SiC-based MOSFET. The gate dielectrics under scrutiny include SiO2, Si3N4, AlN, Al2O3, Y2O3, and HfO2. We find that the choice of gate oxide material significantly influences the transistor's performance, with gate oxides possessing higher relative permittivity notably enhancing its characteristics. Among the materials studied, HfO2 emerges as the most promising candidate, demonstrating superior immunity behaviors in the MOSFET. However, the use of HfO2 is associated with increased gate leakage current. To mitigate this drawback, we introduce a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. Interestingly, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, prove effective in preserving the transistor's on-state performance metrics while limiting gate leakage current across the entire range of gate voltages examined. To validate the predictive capabilities of our modeling analysis, we compare our simulation results with experimental data from the literature, and we observe a favorable agreement. This research holds particular significance in applications employing low-power MOSFETs, where reliability and durability are as critical as performance. For instance, in the context of power optimizers for photovoltaic modules, which fall under the category of low-load and low-voltage DC–DC converters, these devices play a pivotal role in enhancing energy generation under challenging environmental conditions while ensuring long-term reliability.

Comparative Study of Temperature-Dependent Characteristics for SiC MOSFETs

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Comparative Study on Reliability and Application Features of SiC MOSFET

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Analysis of basic performance parameters and temperature effect of SiC-MOSFET

Temperature Dependent Characteristics of GaSb P-Channel MOSFETs with Si-implanted Source and Drain

GaSb P-Channel Metal-Oxide-semiconductor Field-Effect Transistor and Its Temperature Dependent Characteristics

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range

Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison between Planar-Gate and Trench-Gate Structures

Modeling of SiC MOSFET with temperature dependent parameters and its applications

Cryogenic and high temperature performance of 4H-SiC power MOSFETs

A Decoupled Junction Temperature and Aging Level Evaluating Method for SiC MOSFETs

Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs