Abstract:Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of enhancement mode Al2O3/GaN MOSFETs (metal–oxide–semiconductor field-effect transistors) separately with sapphire substrate and Si substrate are prepared. It is found that the performance of sapphire substrate device is better than that of silicon substrate. Comparing these two devices, the maximum drain current of sapphire substrate device (401 mA/mm) is 1.76 times that of silicon substrate device (228 mA/mm), and the field-effect mobility (μ FEmax) of sapphire substrate device (176 cm2/V⋅s) is 1.83 times that of silicon substrate device (96 cm2/V⋅s). The conductive resistance of silicon substrate device is 21.2Ω ⋅mm, while that of sapphire substrate device is only 15.2Ω ⋅mm, which is 61% that of silicon substrate device. The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al2O3/GaN interface. Experimental studies show that (i) interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device, (ii) Both the border traps in Al2O3 dielectric near Al2O3/GaN and the interface traps in Al2O3/GaN interface have a significantly effect on device channel mobility, and (iii) the properties of gallium nitride materials on different substrates are different due to wet etching. The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.

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Temperature Dependent Characteristics of GaSb P-Channel MOSFETs with Si-implanted Source and Drain

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Gasb Inversion-Mode Pmosfets with Atomic-Layer-Deposited Al2o3 As Gate Dielectric

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Comparative Study of Temperature-Dependent Characteristics for SiC MOSFETs

300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio

Temperature-dependent Characteristics for the P-Type CuO Gate HEMT and High-K HfO2 MIS-HEMT on the Si Substrates

Low-temperature characteristics and gate leakage mechanisms of LPCVD-SiN<i>x</i>/AlGaN/GaN MIS-HEMTs

Physical Analysis of Normally-off ALD Al2O3/GaN MOSFET with Different Substrates Using Self-Terminating Thermal Oxidation-Assisted Wet Etching Technique

Metal-oxide-semiconductor Field-Effect Transistors on GaAs (111)A Surface with Atomic-Layer-deposited Al2O3 As Gate Dielectrics

Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs

Electrical Characterization of Back-Gated Bi-Layer MoS2 Field-Effect Transistors and the Effect of Ambient on Their Performances

Channel Properties of Ga2O3-on-SiC MOSFETs

Investigations on In0.12Al0.88N/AlN/AlxGa1−xN/In0.12Al0.88N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

Atomic-Layer-Deposited Al2o3/Gaas Metal-Oxide-Semiconductor Field-Effect Transistor on Si Substrate Using Aspect Ratio Trapping Technique

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Experimental Investigation on Threshold Voltage Instability for β-Ga 2 O 3 MOSFET Under Electrical and Thermal Stress

Electrical properties and temperature behavior of strained-Si N-MOSFETs

Mechanisms of negative bias instability of commercial SiC MOSFET observed by current transients