Abstract:This work investigates the gate oxide reliability of commercial 1.2 kV silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) with planar and trench gate structures. The performance of threshold voltage (Vth) and gate leakage current (Igss) in SiC MOSFETs is evaluated under positive and negative gate voltage stress. The oxide lifetimes of SiC planar and trench MOSFETs at 150 °C are measured using constant voltage Time-Dependent Dielectric Breakdown (TDDB) testing. From the test results, it is found that electron trapping and hole trapping in SiO2 caused by oxide electric field (Eox) stress affect the Vth of SiC MOSFETs. The saturation and turnaround behavior of the Vth shift during positive and negative gate voltage stresses indicates that the influence of charge trapping in the gate oxide varies with stress time. The Igss under positive and negative gate voltages depends on the tunneling barrier height for electrons and holes, respectively, which can be calculated using the Fowler–Nordheim (FN) tunneling mechanism. Moreover, the presence of near-interface traps (NITs) affects the barrier height for holes under negative gate voltages. The behavior of Vth shift and Igss under high-temperature gate bias reflects the charge trapping occurring in different regions of the gate oxide. In addition, compared to SiC planar MOSFETs, SiC trench MOSFETs with thicker gate oxide tend to exhibit higher lifetimes in TDDB tests.

Mechanisms of negative bias instability of commercial SiC MOSFET observed by current transients

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs

SiC MOSFET threshold-stability issues

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Investigation of an Anomalous Hump in Gate Current after Negative-Bias Temperature-Instability in Hfo2/Metal Gate P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN P-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Origin and Recovery of Negative V TH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs