Abstract:In this letter, the origin and related physical insights of gate reliability issues under various Vgs and high temperatures (up to 300 °C) are revealed in-depth, through splitting MOS gate structure of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) into N-type JFET and P-type channel region under identical manufacturing processes and thermal budgets of SiC MOSFETs. From 25 to 300 °C, the safety limit of positive Vgs of SiC MOSFETs is mainly dependent on the gate oxide on the JFET surface, whereas that of negative Vgs is dependent on the gate oxide on the channel surface. The gate oxide on the channel surface is weaker than that on the JFET surface in terms of Fowler–Nordheim (F-N) tunneling, resulting in asymmetric safety Vgs of current SiC MOSFET. Moreover, when temperature ranges from 25 to 150 °C, the degradation of gate oxide under −15 V < Vgs < 25 V is caused by the hole or electron direct tunneling mechanism. However, when the temperature reaches 300 °C, the degradation of gate oxide under −5 V < Vgs < 10 V is caused by the hole or electron hopping conduction mechanism. Furthermore, the reliability of gate oxide is evaluated by the time-dependent dielectric breakdown measurement. The charge-to-breakdown (QBD) of gate oxide is severely degraded -t 300 °C mainly due to the barrier height (${it{ Phi}}_{rm B}$) degradation. These efforts can provide accurate weakness points of gate oxide under higher Vgs bias (particular for negative bias) and higher temperature (300 °C) for SiC MOSFETs, further helping use and design rugged converters with the fast-speed operation of SiC MOSFETs.

Origin and Recovery of Negative V TH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Mechanisms of negative bias instability of commercial SiC MOSFET observed by current transients

Strain Tuning on Van Der Waals Negative Capacitance Transistors

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

Investigation of degradation mechanism after negative bias temperature stress in Si/SiGe channel metal–oxide–semiconductor capacitors induced by hydrogen diffusion

Quantified Density of Active Near Interface Oxide Traps in 4H-Sic MOS Capacitors

The effect of charge redistribution on flat-band voltage turnaround in 4H-SiC MOS capacitors

Characteristics and Mechanisms of Subthreshold Voltage Hysteresis in 4H-Sic MOSFETs*

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

Simulation of Threshold Voltage Instability of 4H-Sic MOSFET

Physical Investigation of Subthreshold Swing Degradation Behavior in Negative Capacitance FET

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors

Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range

Characteristics of Thermally Nitrided Gate Oxide Grown on N- and P-type 4H-SiC Surface from Commercial SiC MOSFET Perspective

Characterization of Threshold Voltage Shift in SiC MOSFETs Under Nanosecond-Range Switching and Its Impact on High- Frequency Applications

Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET