Abstract:The $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface in the termination area is a crucial component in limiting high-temperature reverse-bias (HTRB) reliability for $\mathrm{Si}\mathrm{C}$-based high-voltage devices. However, the atomic structure and carrier-trapping behavior of the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defects therein and the underlying physical mechanisms of breakdown-voltage (${V}_{\mathrm{BD}}$) variation are still largely unclear. Here, the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defects of 4H-$\mathrm{Si}\mathrm{C}$ gate turn-off (GTO) thyristors before and after HTRB stress are investigated by transient capacitance measurements and density-functional-theory (DFT) calculations. It is found that the bias stress at 4.4 kV enlarges the interface state density at ${E}_{C}\ensuremath{-}0.60$ eV to ${E}_{C}\ensuremath{-}1.33$ eV by electron capturing. As a result, the negative interface charge is generated. As high-resolution transmission electron microscopy reveals the presence of excess carbon near the $\mathrm{Si}\mathrm{C}$ surface, DFT calculations are focused on carbon-related interface defects to clarify the atomic and electronic structures of the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface trap and assign them to negatively charged excess split-interstitial carbon at the interface. Furthermore, technical computer-aided-design simulation further proves that the negatively charged $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defect is the main cause for the observed ${V}_{\mathrm{BD}}$ degradation after the HTRB test, which leads to a strong electric ﬁeld crowding effect. These results not only provide deep physical insights underlying ${V}_{\mathrm{BD}}$ degradation in HTRB-stressed high-voltage devices, but are also of significant importance in the optimizations of device structure and oxidation technology for $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interfaces in high-voltage $\mathrm{Si}\mathrm{C}$ devices.

The effect of charge redistribution on flat-band voltage turnaround in 4H-SiC MOS capacitors

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Characterization of Non-Equilibrium Charge of MOS Capacitors on P-Type 4H SiC

Quantified Density of Active Near Interface Oxide Traps in 4H-Sic MOS Capacitors

Origin and Recovery of Negative V TH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements

Study of Vertical Capacitance in an n-Type 4H-SiC Stepped Thick-Oxide Trench MOS Structure

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors

SiC MOSFET threshold-stability issues

Atomistic Mechanism of 4 H - Si C / Si O 2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices

Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001)

Atomistic Mechanism of 4 H - SiC/SiO2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress

Comparison of Charge-Retention Times in N- and P-Type 4H-Sic Mos Capacitors As Non-Volatile Memory Elements

Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

High frequency CV measurements of SiC MOS capacitors