Abstract:This paper investigates the capacitance–voltage (C–V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C–V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C–V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C–V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C–V measurement and the photonic high-frequency C–V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C–V measurement. On the other hand, the photonic high-frequency C–V measurement can bypass the leakage problem, and get reliable low-frequency C–V characteristic, which can be used to evaluate whether the full silicidation has completed or not, and to extract the interface trap density of the SiO2/Si interface.

Study of Vertical Capacitance in an n-Type 4H-SiC Stepped Thick-Oxide Trench MOS Structure

Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal– Oxide–Semiconductor Structure

A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

A Novel 4H-SiC Asymmetric MOSFET with Step Trench

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

High frequency CV measurements of SiC MOS capacitors

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

Capacitance–voltage Characterization of Fully Silicided Gated MOS Capacitor

Characteristics and Mechanisms of Subthreshold Voltage Hysteresis in 4H-Sic MOSFETs*

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

Novel Sic-Trench-Mosfet with Reduced Oxide Electric Field

Characterization of Non-Equilibrium Charge of MOS Capacitors on P-Type 4H SiC

4H-SiC trench gate MOSFETs with field plate termination

4H-SiC Trench MOSFET Structure with Wrap N-type Pillar for Low Oxide Field and Enhanced Switching Performance

Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs

Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example