Abstract:A novel 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric (INHK‐TMOS) is proposed. The modulation effect of the high‐K gate dielectric and extended high‐K deep trench dielectric improves the device performances significantly. The results show that the INHK‐TMOS breaks the SiC limit, indicating that the conflicting relationship between breakdown voltage and Ron,sp is effectively alleviated. This paper proposes and investigates a novel 4H‐SiC trench MOSFET (TMOS) with integrated high‐K deep trench and gate dielectric (INHK‐TMOS). The integrated high‐K (INHK) consists of a high‐K gate dielectric and an extended high‐K deep trench dielectric in the drift region. Firstly, the high‐K gate dielectric together with the metal‐forming high‐K metal gate structure, which increases the gate oxide capacitance (COX), reduces the threshold voltage (VTH) and the specific on‐resistance (Ron,sp). Secondly, the extended high‐K deep trench dielectric not only modulates the electric field in the drift region by introducing a new electric field peak at the bottom of the high‐K deep trench dielectric, thereby enhancing the breakdown voltage (BV), but also improves the doping concentration (ND) of the drift region by the assist depletion effect of the high‐K dielectric, further optimizing the forward conduction characteristics. Simulation results demonstrate that when compared to the conventional TMOS, the INHK‐TMOS using HfO2 exhibits a 52.6% reduction in VTH, a 52.1% reduction in Ron,sp, a 20.3% increasement in BV and a 202.3% improvement in figure of merit.

Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

A novel high-performance junctionless 4H-SiC trench MOSFET with improved switching characteristics

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

A Novel 4H-SiC Asymmetric MOSFET with Step Trench

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

A New SiC Split-gate MOSFET Structure with Protruded P-base and the Mesa above JFET for Improving HF-FOM

SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness

A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars

4H-Sic Super-Junction JFET: Design and Experimental Demonstration