Abstract:In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations. A deep trench filled with P-poly-Si combined with the P-SiC region leads to a charge balance effect. Instead of a full-SiC P region in conventional super-junction MOSFET, this new structure reduces the P region in a super-junction MOSFET, thus helping to lower the specific on-resistance. As a result, the figure of merit (FoM, BV2/Ron,sp) of the proposed new structure is 642% and 39.65% higher than the C-MOS and the SJ-MOS, respectively.

What problem does this paper attempt to address?

The paper attempts to address the issue of improving the performance of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), particularly by reducing the specific on-resistance (Ron,sp). Specifically, the paper proposes a novel Deep-Trench Super-Junction (DTSJ) SiC MOSFET structure, which achieves this goal by introducing a split-gate design and filling deep trenches with P-type polysilicon. ### Main Issues: 1. **Reducing Specific On-Resistance (Ron,sp)**: - Traditional SiC MOSFETs have a high Ron,sp, which limits their performance in high-power applications. - The new structure significantly reduces Ron,sp by decreasing the area of the P-region and optimizing the charge balance effect. 2. **Increasing Breakdown Voltage (BV)**: - Traditional SiC MOSFETs are prone to breakdown at high voltages, affecting their reliability and performance. - The new structure increases the breakdown voltage through the design of deep trenches and P-SiC regions, making it comparable to or even better than super-junction MOSFETs. 3. **Reducing Switching Losses**: - High switching losses lead to device heating and reduced efficiency. - The new structure reduces switching losses by decreasing the reverse transfer capacitance (Crss) and gate-drain charge (Qgd). 4. **Simplifying the Manufacturing Process**: - The traditional SiC SJ MOSFET manufacturing process is complex and costly. - The new structure simplifies the manufacturing process and reduces production costs by using thin P polysilicon and P-SiC instead of traditional P-SiC columns. ### Solutions: - **Novel Structure Design**: Introducing split-gate and deep-trench filled P-type polysilicon to form a super-junction structure. - **Charge Balance Effect**: Achieving better charge balance by optimizing the doping concentration and width of the P and N regions. - **Simulation Verification**: Using Sentaurus TCAD simulation software to theoretically verify the new structure, demonstrating its superior performance in terms of on-resistance, breakdown voltage, and switching losses. Through these improvements, the new structure not only outperforms traditional C-MOS and SJ-MOS in terms of performance but also offers advantages in the manufacturing process, providing new possibilities for high-power SiC MOSFET applications.

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