Abstract:This article investigates an improved 4H-SiC trench gate metal–oxide–semiconductor field-effect transistor (MOSFET) (UMOSFET) fitted with a super-junction (SJ) shielded region. The modified structure is composed of two n-type conductive pillars, three p-type conductive pillars, an oxide trench under the gate, and a light n-type current spreading layer (NCSL) under the p-body. The n-type conductive pillars and the light n-type current spreading layer provide two paths to and promote the diffusion of a transverse current in the epitaxial layer, thus improving the specific on-resistance (R on,sp). There are three p-type pillars in the modified structure, with the p-type pillars on both sides playing the same role. The p-type conductive pillars relieve the electric field (E-field) in the corner of the trench bottom. Two-dimensional simulation (silvaco TCAD) indicates that R on,sp of the modified structure, and breakdown voltage (V BR) are improved by 22.2% and 21.1% respectively, while the maximum figure of merit ( FOM=VBR2/Ron,sp ) is improved by 79.0%. Furthermore, the improved structure achieves a light smaller low gate-to-drain charge (Q gd) and when compared with the conventional UMOSFET (conventional-UMOS), it displays great advantages for reducing the switching energy loss. These advantages are due to the fact that the p-type conductive pillars and n-type conductive pillars configured under the gate provide a substantial charge balance, which also enables the charge carriers to be extracted quickly. In the end, under the condition of the same total charge quantity, the simulation comparison of gate charge and OFF-state characteristics between Gauss-doped structure and uniform-doped structure shows that Gauss-doped structure increases the V BR of the device without degradation of dynamic performance.

An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss

Novel Designs of 4H-Sic Trench Gate Metal-Oxide-Semiconductor Field Effect Transistors (umosfets) with Low On-Resistance

Improved 4H-Sic UMOSFET with Super-Junction Shield Region

An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate

4H-SiC UMOSFET With an Electric Field Modulation Region Below P-Body

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

Simulation of a Short-Channel 4H-Sic UMOSFET with Buried P Epilayer for Low Oxide Electric Field and Switching Loss

A novel high-performance junctionless 4H-SiC trench MOSFET with improved switching characteristics

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

High performance 4H-SiC MOSFET with deep source trench

An improved structure of 3.3kV 4H-SiC VDMOSFETs with lower on-resistance and reverse transfer capacitance

Low Turn-Off Loss 4H-Sic Insulated Gate Bipolar Transistor with a Trench Heterojunction Collector

A Novel 4H-Sic Trench MOSFET with Double Shielding Structures and Ultralow Gate-Drain Charge

A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics

A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance

SiC Trench MOSFET with Reduced Switching Loss and Increased Short-Circuit Capability

4H-SiC Trench MOSFET Structure with Wrap N-type Pillar for Low Oxide Field and Enhanced Switching Performance

4H–SiC trench MOSFET with Inverted-T groove

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability