Abstract:A SiC double-trench MOSFET embedded with a lower-barrier diode and an L-shaped gate-source in the gate trench, showing improved reverse conduction and an improved switching performance, was proposed and studied with 2-D simulations. Compared with a double-trench MOSFET (DT-MOS) and a DT-MOS with a channel-MOS diode (DTC-MOS), the proposed MOS showed a lower voltage drop (VF) at IS = 100 A/cm2, which can prevent bipolar degradation at the same blocking voltage (BV) and decrease the maximum oxide electric field (Emox). Additionally, the gate–drain capacitance (Cgd) and gate–drain charge (Qgd) of the proposed MOSFET decreased significantly because the source extended to the bottom of the gate, and the overlap between the gate electrode and drain electrode decreased. Although the proposed MOS had a greater Ron,sp than the DT-MOS and DTC-MOS, it had a lower switching loss and greater advantages for high-frequency applications.

What problem does this paper attempt to address?

The problem this paper attempts to address is the deficiencies in reverse conduction performance and switching speed of existing silicon carbide (SiC) trench metal-oxide-semiconductor field-effect transistors (MOSFETs). Specifically, the body diode of SiC MOSFETs generates a high forward voltage drop (VF) during reverse conduction and is prone to basal plane dislocations (BPDs) and stacking faults (SFs) when operating in bipolar mode. These defects increase conduction losses. Additionally, to suppress the impact of the body diode, a freewheeling diode is typically paralleled, which not only increases the package size but also adds parasitic inductance, limiting the switching frequency of the MOSFET. To address these issues, the paper proposes a novel 1200 V L-shaped split-gate trench SiC MOSFET that integrates a low-barrier diode (LBD). This design can suppress the reverse conduction of the body diode, avoid the effects of bipolar degradation, and reduce the gate-drain capacitance (Cgd) by extending the source to the bottom of the gate to form a split-gate structure, thereby achieving faster switching speeds. Compared to traditional double trench MOSFETs (DT-MOS) and double trench MOSFETs with channel MOS diodes (DTC-MOS), this structure shows significant advantages in reducing forward voltage drop, minimizing gate-drain capacitance and gate-drain charge (Qgd), lowering the maximum oxide layer electric field (Emox), and reducing switching losses, making it particularly suitable for high-frequency applications.

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