A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance

Xiaochuan Deng,Xiaojie Xu,Xuan Li,Xu Li,Yi Wen,Wanjun Chen

DOI: https://doi.org/10.1109/led.2020.3017650

IF: 4.8157

2020-10-01

IEEE Electron Device Letters

Abstract:A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with improved third quadrant and switching performance is proposed and characterized in this letter. The LBD-MOSFET not only exhibits about 3 times lower diode turn on voltage than the body diode, but also successfully eliminates bipolar degradation phenomena. A low potential barrier for electrons transporting from JFET region to N⁺ source region is formed in LBD-MOSFET owing to the existence of the depletion charge in LBD base region. Meanwhile, the gate-to-drain charge ( ${Q}_{text {gd}}){}$ and gate-to-drain capacitance ( ${C}_{text {gd}}){}$ of LBD-MOSFET are significantly reduced by about $21times $ and $15times $ in comparison with the conventional MOSFET (C-MOSFET), due to the reduction of the overlapping area of the gate and drift region. Therefore, the obtained high frequency figures of merit (HF-FOM $1= {R}_{text {on,sp}}times {Q}_{text {gd}}$ and HF-FOM $2= {R}_{text {on,sp}}times {C}_{text {gd}}$ ) for the LBD-MOSFET are improved by about 13 times and 9 times compared with C-MOSFET. Furthermore, a compact potential barrier analytical model based on Poisson's Law is developed to understand the origin of low potential barrier diode in SiC LBD-MOSFET. The overall enhanced performances suggest SiC LBD-MOSFET is an excellent choice for high frequency power electronic applications.

engineering, electrical & electronic

What problem does this paper attempt to address?

The problem this paper attempts to address is: existing silicon carbide (SiC) MOSFETs have some key performance issues in high-frequency power electronics applications, particularly the bipolar degradation phenomenon and high forward voltage drop caused by their internal parasitic PN body diode. These issues limit the advantages of SiC MOSFETs in high-power applications.

Specifically, the paper proposes a novel planar gate SiC MOSFET embedded with a low barrier diode (LBD-MOSFET), aimed at improving third quadrant and switching performance. By reducing the diode's forward voltage and eliminating the bipolar degradation phenomenon, the LBD-MOSFET can significantly enhance performance in high-frequency applications. Additionally, the paper develops a compact barrier analysis model based on the Poisson equation to explain the formation mechanism of the low barrier diode. These improvements make the SiC LBD-MOSFET an excellent choice for high-frequency power electronics applications.