An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate
Xu Song,Xiaorong Luo,Jie Wei,Ke Zhang,Wei Su,Jian Fang,Fei Yang
DOI: https://doi.org/10.1088/1361-6641/ab92d0
IF: 2.048
2020-07-20
Semiconductor Science and Technology
Abstract:A novel ultralow loss 4H-SiC double trenches MOSFET is presented and its mechanism is investigated by simulation. The device features two integrated heterojunction diodes (HJD) consisting of a P-type polycrystalline Silicon and SiC, a trench split gate (SG) and P+ region (PR) beneath the source trench. Both the SG and PR reduce the coupling effect between gate and drain, and transform part of gate-drain capacitance (<i>C</i> <sub>GD</sub>) into gate-source capacitance (<i>C</i> <sub>GS</sub>) and drain-source capacitance (<i>C</i> <sub>DS</sub>). Compared with the conventional trench MOSFET (Con-TMOS) and the HJD trench MOSFET (HJD-TMOS), the proposed double trenches MOSFET with integrated HJDs and SG (HJD-SG-DTMOS) decreases the <i>C</i> <sub>GD</sub> by 83% and 89%, respectively. Moreover, the integrated HJDs take the place of the parasitic body diode as a freewheel diode, and thus reduce the reverse turn-on voltage. As a result, not only is the reverse turn-on voltage of the proposed device decreased by 69% and 33%, but also the switching loss is reduced by 64% and 49%, compared with those of Con-TMOS and HJD-TMOS, respectively.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter