Abstract:Abstract In this article, a novel 1200 V SiC super-junction (SJ) MOSFET with a partially widened pillar structure is proposed and investigated by using the two-dimensional numerical simulation tool. Based on the SiC SJ MOSFET structure, a partially widened P-region is added at the SJ pillar region to improve the short-circuit (SC) ability. After investigating the position and doping concentration of the widened P-region, an optimal structure is determined. From the simulation results, the SC withstand times ( SCWT ) of the conventional trench MOSFET (CT-MOSFET), the SJ MOSFET, and the proposed structure at 800 V DC bus voltage are 15 μs, 17 μs, and 24 μs, respectively. The SCWT of the proposed structure increased by 60 % and 41.2 % in comparison with that of the other two structures. The main reason for the proposed structure with an enhanced SC capability is related to the effective suppression of saturation current at the high DC bias conditions by using a modulated P-pillar region. Meanwhile, a good Baliga’s FOM ( BV 2 / R on ) also can be achieved in the proposed structure due to the advantage of the SJ structure. In addition, the fabrication technology of the proposed structure is compatible with the standard epitaxy growth method used in the SJ MOSFET. As a result, the SJ structure with this feasible optimization skill presents an effect on improving the SC reliability of the SiC SJ MOSFET without the degeneration of the Baliga’s FOM .

A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance

4H-SiC Trench MOSFET Structure with Wrap N-type Pillar for Low Oxide Field and Enhanced Switching Performance

SiC Trench MOSFET with Reduced Switching Loss and Increased Short-Circuit Capability

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

SiC Trench MOSFET with Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

An Adjustable P-Region Potential SiC Trench MOSFET With Improved High-Frequency and Short-Circuit Performance

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Fabricating and TCAD Optimization for a SiC Trench MOSFET With Tilted P-Shielding Implantation and Integrated TJBS

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance