Abstract:The SiC trench gate lateral MOSFET featuring dual source trenches is proposed in this work. 2D numerical simulations by TCAD are conducted to study the performance and the reliability of the proposed structure and the conventional ones. With the trench gate, the device specific ON-resistance is reduced by more than 50% compared to that of the planar gate device. The device with proposed dual source trenches can also prevent the Pwell punch through problem that occurs in conventional lateral LMOS. As a result, a blocking voltage over 1200V can be achieved with the proposed structure. The proposed devices have two types of configurations. Compared with the configuration of double shallow trenches, the configuration of deep and shallow trenches can mitigate the curvature effect near the P+ source region by increasing the effective curvature radius. As a result, the RESURF doping and epi thickness windows are both expanded by $1.5{\times }$ . Furthermore, as the deep source trenches push the electric field away from the gate trench, the off-state oxide field is effectively reduced to below 3MV/cm. Thus, the long-term reliability is substantially improved. In addition, the deep and shallow source trench configuration provides the enhanced screen effect and hence lowers the gate charge by 50%. Faster switching can be achieved with this structure.

An Adjustable P-Region Potential SiC Trench MOSFET With Improved High-Frequency and Short-Circuit Performance

A Novel SiC Trench MOSFET Embedding Auto-Adjust Source-Potential Region with Switching Oscillation Suppression

SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness

SiC Trench MOSFET with Reduced Switching Loss and Increased Short-Circuit Capability

A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

4H-SiC Trench MOSFET Structure with Wrap N-type Pillar for Low Oxide Field and Enhanced Switching Performance

Novel Sic-Trench-Mosfet with Reduced Oxide Electric Field

SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness

A Low Loss Single-Channel SiC Trench MOSFET with Integrated Trench MOS Barrier Schottky Diode

4H-Sic Trench MOSFET with an Integrated Schottky Barrier Diode and L-shaped P+ Shielding Region

High performance SiC trench-type MOSFET with an integrated MOS-channel diode

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

A Novel 4H-SiC Asymmetric MOSFET with Step Trench

SiC Trench MOSFET with Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode