Abstract:This paper investigates the capacitance–voltage (C–V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C–V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C–V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C–V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C–V measurement and the photonic high-frequency C–V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C–V measurement. On the other hand, the photonic high-frequency C–V measurement can bypass the leakage problem, and get reliable low-frequency C–V characteristic, which can be used to evaluate whether the full silicidation has completed or not, and to extract the interface trap density of the SiO2/Si interface.

High frequency CV measurements of SiC MOS capacitors

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal– Oxide–Semiconductor Structure

Characterization of Non-Equilibrium Charge of MOS Capacitors on P-Type 4H SiC

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

High-frequency Capacitance–voltage Measurement of Plasma-Enhanced Chemical-Vapor-deposition-grown SiO2/n-GaN Metal-Insulator-semiconductor Structures

Capacitance–voltage Characterization of Fully Silicided Gated MOS Capacitor

Study of Vertical Capacitance in an n-Type 4H-SiC Stepped Thick-Oxide Trench MOS Structure

The Study of Physical and Irradiation Properties of SiO_2/SiC Interface

Electrical characterization of SiC MOS capacitors: A critical review

Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

MOS Capacitor Characteristics of 3C-Sic Films Deposited on Si Substrates at 1270°C

A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Investigation of Electron-Hole Generation in MOS Capacitors on 4H SiC

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

Quantified Density of Active Near Interface Oxide Traps in 4H-Sic MOS Capacitors

MOS Capacitor Evaluation of Deep States at the Interfacial Grain Boundary in (110/100) Bonded Si