Abstract:This paper investigates the capacitance–voltage (C–V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C–V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C–V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C–V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C–V measurement and the photonic high-frequency C–V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C–V measurement. On the other hand, the photonic high-frequency C–V measurement can bypass the leakage problem, and get reliable low-frequency C–V characteristic, which can be used to evaluate whether the full silicidation has completed or not, and to extract the interface trap density of the SiO2/Si interface.

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Physical and Electrical Properties of a Si3N4/Si/GaAs Metal–insulator–semiconductor Structure

Physical and electrical properties of a Si 3 N 4 Õ Si Õ GaAs metal – insulator – semiconductor structure

Capacitance–voltage Characterization of Fully Silicided Gated MOS Capacitor

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

High-frequency Capacitance–voltage Measurement of Plasma-Enhanced Chemical-Vapor-deposition-grown SiO2/n-GaN Metal-Insulator-semiconductor Structures

High frequency CV measurements of SiC MOS capacitors

Electrical Characteristics of Near-Interface Traps in 3C-Sic Metal–Oxide–Semiconductor Capacitors

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

An interesting phenomenon in the C-V measurements of nanocrystal based MOS capacitor

C-V Characteristics of Metal-Polysilane-Silicon Structures

Interface Properties of Si3N4Si/n-GaAs Metal-Msulator-semiconductor Structure Using a Si Interlayer

Capacitance-voltage (C-V) Characterization in Very Thin Suspended Silicon Nanowires for NEMS-CMOS Integration in 160nm Silicon-on-Insulator (SOI)

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Capacitance–voltage Study of SiO2/nanocrystalline Silicon/sio2 Double-Barrier Structures

Capacitance-Voltage Characteristics Of A Schottky Junction Containing Sige/Si Quantum Wells

High Frequency Capacitance–voltage Characterization of Al2O3/ZrO2/Al2O3 in Fully Depleted Silicon-on-insulator Metal–oxide–semiconductor Capacitors

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure