Ultrashallow Heavily Constrained Quantum Wells: the Cradle for Fully Electrically Controlled and Microwave Coupled Quantum Bits
Yiwen Zhang,Zonghu Li,Yuchen Zhou,Yuhui Ren,Jiahan Ke,Jiale Su,Yanpeng Song,Jun Deng,Yang Liu,Runze Zhang,Haiou Li,Baochuan Wang,Zhenhua Wu,Jun Luo,Zhenzhen Kong,Gang Cao,Guoping Guo,Chao Zhao,Guilei Wang
DOI: https://doi.org/10.1103/physrevmaterials.8.046203
IF: 3.98
2024-01-01
Physical Review Materials
Abstract:Ge/SiGe heterostructure quantum well structures based on Ge two-dimensional hole gas have become one of the most promising research directions for preparing spin quantum bits due to their low disorder and high mobility. In this study, high-quality virtual substrates were epitaxially grown on 8-in silicon substrates using reduced pressure chemical vapor deposition. The surface roughness of the samples was optimized by adjusting key parameters such as the thickness of the reverse gradient buffer layer and Si1-xGex buffer layer. Based on the strain modulation of dislocation dynamics, high-quality strained quantum wells with a density of stress accumulation points (DSAP) of 0.301/mu m2 and surface RMS roughness less than 3 nm were achieved. Ultimately, an ultrashallow heavily constrained and undoped quantum well with a well depth of 15 nm, in-plane compressive strain of sil = -1.19%, and a mobility of 3.382 x 105 cm2/Vs was obtained. A novel characterization method for quantum wells was proposed based on the defined DSAP. The ultrashallow quantum well depth and higher compressive strain enable the quantum well to maintain a high effective g factor (up to 8.3), becoming the cradle for fully electrically controlled and microwave coupled quantum bits.