Abstract:A single frequency admittance spectroscopy technique is introduced for determining the band discontinuity on Si/GexSi1-x/Si single quantum well (SQW). By using this method, the more accurate experimental results can be obtaind from a single frequency admittance spectrum. For an alloy with composition x=0.33，we get the activation energy Ea＝0.20eV. In order to obtain the value of the band offset，it is necessary to determine the position of Fermi level which depends on the dopam concentration inside and outside the well, the band offset of hetero-interface and temperature. By solving Poisson equation, we get the energy band diagram and Fermi level of the test sample. It is shown that the Fermi level lies about 40 meV above the top of valance band in the well. And due iv the carrier transfer at the hetero-interface, the carrier concentration (about ２×１０17ｃｍ－３) in the well is one order large than dopant concentration(1×１０16ｃｍ－３). The energy bands at two sides of the interfaces are bent by about 0.006 eV in the well and O.11eV in the barrier, hence the valance band offset can be calculated as 0.16eV. The accuracy of this technique can also be verified from reconstruction of C-T and G-T curves by cumputer simulation.

Photocurrent Absorption Spectroscopic Study of Si0.6ge0.4/Si Quantum Wells

Electric Field Dependence of Photocurrent Absorption in GeSi/Si Quantum Wells

Photovoltaic Investigations of Interband Transitions in SiGe/Si Multiple Quantum Wells

Photoabsorption and photoresponse behaviors of Si1−xGex/Si quantum wells

Infrared Absorption in SiGe/Si Multiple Quantum Wells

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Energy Levels of Valence Subbands in Si/Si 1- X Ge X Quantum Well by Admittance Spectroscopy

MEASUREMENT OF THE BAND OFFSET IN GexSi1-x/Si SINGLE QUANTUM WELL BY USING SINGLE FREQUENCY ADMITTANCE SPECTROSCOPY

Conductance-voltage characteristics of SiGe/Si quantum-well structures

Quantum Levels in Ge Quantum Dots Studied by Photocurrent Spectroscopy and Admittance Spectroscopy

Band offset measurements of Si1-xGex/Si quantum wells studied by conductance technique

Thermal Stability of a Si/Si1−xGex Quantum Well Studied by Admittance Spectroscopy

Study of SiGeSn/GeSn single quantum well towards high-performance all-group-IV optoelectronics

Energy Levels in Doped SiGe Quantum Well Studied by Admittance Spectroscopy

Well Depth Fluctuation of Si1−xGex/Si Quantum Well Structures Studied by Conductance–voltage Technique

Photoluminescence spectra from SiGe/Si strained layer quantum well structure

Photocurrent Spectra of Very Long Wavelength GaAs/AlGaAs Quantum Well Infrared Photodetector

INTERSUBBAND ABSORPTION IN P-Type GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS

Interfacial Defects In Si1-Xgex/Si Quantum-Wells Detected By Deep-Level Transient Spectroscopy

Study of SiGeSn/GeSn/SiGeSn Quantum Well Towards All Group-IV-Optoelectronics

Capacitance-Voltage Characteristics Of A Schottky Junction Containing Sige/Si Quantum Wells