Interfacial Defects In Si1-Xgex/Si Quantum-Wells Detected By Deep-Level Transient Spectroscopy

Qinhua Wang,Fang Lu,Dawei Gong,Xiangjun Chen,Jianbao Wang,Henghui Sun,Xun Wang

DOI: https://doi.org/10.1103/PhysRevB.50.18226

IF: 3.7

1994-01-01

Physical Review B

Abstract:The carrier-emission processes from quantum wells and from deep-level defects have been identified in deep-level transient spectroscopy (DLTS) measurements. The emissions from quantum wells contribute to a majority carrier peak, from which the valence-band offset \ensuremath{\Delta}${\mathit{E}}_{\mathit{v}}$ at the heterointerface is derived. For ${\mathrm{Si}}_{0.67}$${\mathrm{Ge}}_{0.33}$/Si, our experimental result \ensuremath{\Delta}${\mathit{E}}_{\mathit{v}}$=0.24 eV is comparable with the theoretical prediction and previous measurement. The emission of carriers from a high density of interfacial defects gives rise to a minority carrier signal in DLTS, which can be detected only by using an injection pulse with a relatively large pulse width. The partial relaxation of the misfit strain or the nucleation of dislocations may be responsible for the formation of interfacial defects.