Abstract:Grain boundaries (GBs) are a prolific microstructural feature that dominates the functionality of a wide class of materials. The change in functionality at a GB is a direct result of unique local atomic arrangements, different from those in the grain, that have driven extensive experimental and theoretical studies correlating atomic-scale GB structures to macroscopic electronic, infrared-optical, and thermal properties. Here, we examine a SrTiO3 GB using atomic-resolution aberration-corrected scanning transmission electron microscopy (STEM) and ultra-high-energy-resolution monochromated electron energy-loss spectroscopy (EELS), in conjunction with density functional theory (DFT) calculations. This combination enables the direct correlation of the GB structure, composition, and chemical bonding with atomic vibrations within the GB dislocation-cores. We observe that nonstoichiometry and changes in coordination and bonding at the GB leads to a redistribution of vibrational states at the GB and its dislocation-cores relative to the bounding grains. The access to localized vibrations within GBs provided by ultrahigh spatial/spectral resolution EELS correlated with atomic coordination, bonding, and stoichiometry and validated by theory, provides a direct route to quantifying the impact of individual boundaries on macroscopic properties.

Deep-Level Transient Spectroscopy Study On Direct Silicon Bonded (110)/(100) Interfacial Grain Boundary

Deep-level Transient Spectroscopy Study on Direct Silicon Bonded (1 1 0)/(1 0 0) Interfacial Grain Boundary

Capacitance Transient and Current-/Capacitance-voltage Study of Direct Silicon Bonded (110)∕(100) Interface

Electrical Properties of the Bonding Interface in a (110)/(100) Direct-Silicon-Bonded (DSB) Wafer

In Situ Atomistic Observation of Grain Boundary Migration Subjected to Defect Interaction

Impact of Cu Contamination on the Electrical Properties of A Direct Silicon Bonded (110)/(100) Interfacial Grain Boundary

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

MOS Capacitor Evaluation of Deep States at the Interfacial Grain Boundary in (110/100) Bonded Si

A Deep Level Transient Spectroscopic Study of Boron-Ion-implanted Single Quantum Wells

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Detection of Defects at Homoepitaxial Interface by Deep-Level Transient Spectroscopy

Interfacial Defects In Si1-Xgex/Si Quantum-Wells Detected By Deep-Level Transient Spectroscopy

Interfacial Defects Related to the Substrate Treatment in Molecular Beam Epitaxial Silicon

Effect of Small‐Angle Grain Boundary on the Mechanical Properties in Direct Silicon Bonded Wafer

Combined CL/EBIC/DLTS Investigation of a Regular Dislocation Network Formed by Si Wafer Direct Bonding

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy

Deep-Level Transient Spectroscopy of Interfacial States in "Buffer-Free" P-I-N Gasb/Gaas Devices

D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si

Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si

Direct Visualization of Localized Vibrations at Complex Grain Boundaries

Revisiting the Structures and Energies of Silicon 〈110〉 Symmetric Tilt Grain Boundaries