Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si

Correlation Between Residual Strain And Electrically Active Grain Boundaries In Multicrystalline Silicon

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Electron-beam-induced current study of grain boundaries in multicrystalline silicon

Cathodoluminescence Study Of Dislocation-Related Luminescence From Small-Angle Grain Boundaries In Multicrystalline Silicon

(Invited) Defects in Cast-Mono Crystalline Silicon

Grain Boundary Development of Silicon during Directional Solidification: A Phase-Field Study

Grain Boundary Effects on Defect Production and Mechanical Properties of Irradiated Nanocrystalline Sic

Phase Field Simulations of the Poling Process and Nonlinear Behavior of Ferroelectric Polycrystals with Semiconducting Grain Boundaries

Misorientation and Temperature Dependence of Small Angle Twist Grain Boundaries in Silicon: Atomistic Simulation of Directional Growth

Competitive Role of Impurities on the Electrical Activity of As-Grown Σ=13, Σ=25 and Deformed Σ=9 Grain Boundaries in P-Type Silicon Bi-crystals

Effect Of Grain Boundary On The Electromechanical Response Of Ferroelectric Polycrystals

The Nature of a Low Angle Grain-Boundary in a Si Bi-Crystal with Added Fe Impurities

Effect of Small‐Angle Grain Boundary on the Mechanical Properties in Direct Silicon Bonded Wafer

Grain Boundaries in Diamond Films on Si(001)

Examination of crack path in silicon multi-crystals

Engineering of atomic-scale flexoelectricity at grain boundaries

Physics of Grain Boundaries in Polycrystalline Photovoltaic Semiconductors