Grain Boundaries in Graphene on SiC(000$\bar{1}$) Substrate

Yann Tison,Jérôme Lagoute,Vincent Repain,Cyril Chacon,Yann Girard,Frédéric Joucken,Robert Sporken,Fernando Gargiulo,Oleg V. Yazyev,Sylvie Rousset

DOI: https://doi.org/10.1021/nl502854w

2014-12-10

Abstract:Grain boundaries in epitaxial graphene on the SiC(000$\bar{1}$) substrate are studied using scanning tunneling microscopy and spectroscopy. All investigated small-angle grain boundaries show pronounced out-of-plane buckling induced by the strain fields of constituent dislocations. The ensemble of observations allows to determine the critical misorientation angle of buckling transition $\theta_c = 19 \pm~2^\circ$. Periodic structures are found among the flat large-angle grain boundaries. In particular, the observed $\theta = 33\pm2^\circ$ highly ordered grain boundary is assigned to the previously proposed lowest formation energy structural motif composed of a continuous chain of edge-sharing alternating pentagons and heptagons. This periodic grain boundary defect is predicted to exhibit strong valley filtering of charge carriers thus promising the practical realization of all-electric valleytronic devices.

Mesoscale and Nanoscale Physics