Structural and electronic properties of an ordered grain boundary formed by separated (1,0) dislocations in graphene.

Chuanxu Ma,Haifeng Sun,Hongjian Du,Jufeng Wang,Aidi Zhao,Qunxiang Li,Bing Wang,J G Hou
DOI: https://doi.org/10.1039/c4nr06789d
IF: 6.7
2015-01-01
Nanoscale
Abstract:We present an investigation of the structural and electronic properties of an ordered grain boundary (GB) formed by separated pentagon-heptagon pairs in single-layer graphene/SiO2 using scanning tunneling microscopy/spectroscopy (STM/STS), coupled with density functional theory (DFT) calculations. It is observed that the pentagon-heptagon pairs, i. e., (1,0) dislocations, form a periodic quasi-one-dimensional chain. The (1,0) dislocations are separated by 8 transverse rows of carbon rings, with a period of similar to 2.1 nm. The protruded feature of each dislocation shown in the STM images reflects its out-of-plane buckling structure, which is supported by the DFT simulations. The STS spectra recorded along the small-angle GB show obvious differential-conductance peaks, the positions of which qualitatively accord with the van Hove singularities from the DFT calculations.
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