Abstract:Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most promising for technological applications. The electronic and mechanical properties of CVD-grown graphene depend in large part on the characteristics of the grain boundaries. However, the physical properties of these grain boundaries remain challenging to characterize directly and conveniently. Here, we show that it is possible to visualize and investigate the grain boundaries in CVD-grown graphene using an infrared nano-imaging technique. We harness surface plasmons that are reflected and scattered by the graphene grain boundaries, thus causing plasmon interference. By recording and analyzing the interference patterns, we can map grain boundaries for a large area CVD-grown graphene film and probe the electronic properties of individual grain boundaries. Quantitative analysis reveals that grain boundaries form electronic barriers that obstruct both electrical transport and plasmon propagation. The effective width of these barriers (~10-20 nm) depends on the electronic screening and it is on the order of the Fermi wavelength of graphene. These results uncover a microscopic mechanism that is responsible for the low electron mobility observed in CVD-grown graphene, and suggest the possibility of using electronic barriers to realize tunable plasmon reflectors and phase retarders in future graphene-based plasmonic circuits.

Electronic states of disordered grain boundaries in graphene prepared by chemical vapor deposition

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Electronic And Transport Properties In Geometrically Disordered Graphene Antidot Lattices

Electronic Properties of Disordered Graphene Antidot Lattices

Electronic Transport in Disordered Bilayer and Trilayer Graphene

Electronic and plasmonic phenomena at graphene grain boundaries

Periodic Grain Boundaries Formed by Thermal Reconstruction of Polycrystalline Graphene Film.

Structural and electronic properties of an ordered grain boundary formed by separated (1,0) dislocations in graphene.

Mapping electronic states of dual-parallel and symmetric zigzag grain boundaries of graphene on highly oriented pyrolytic graphite

Density of States and Its Local Fluctuations Determined by Capacitance of Strongly Disordered Graphene

Fingerprints of Disorder Source in Graphene

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

Optical Conductivity Of Disordered Graphene Beyond The Dirac Cone Approximation

First Principles Study of Electronic Structure and Transport in Graphene Grain Boundaries

Anomalous Dissipation Mechanism and Hall Quantization Limit in Polycrystalline Graphene Grown by Chemical Vapor Deposition

Disorder-Induced Delocalization in Magic-Angle Twisted Bilayer Graphene

Destroyed quantum Hall effect in graphene with [0001] tilt grain boundaries

Grain Boundaries in Graphene on SiC(000$\bar{1}$) Substrate

Grain boundary effects on electronic transport in metals

Structural and electronic properties of grain boundaries in graphite: Planes of periodically distributed point defects