Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Grain coalescence and electronic properties of epitaxial graphene

Tailoring the Thermal and Electrical Transport Properties of Graphene Films by Grain Size Engineering

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Bimodal Grain-Size Scaling of Thermal Transport in Polycrystalline Graphene from Large-Scale Molecular Dynamics Simulations.

Raman spectroscopy of epitaxial graphene on a SiC substrate

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Low-temperature quantum transport in CVD-grown single crystal graphene

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Micro/nanoscale spatial resolution temperature probing for the interfacial thermal characterization of epitaxial graphene on 4H-SiC

Grain Boundaries in Graphene on SiC(000$\bar{1}$) Substrate

Annealing Time Dependence of Morphology and Structure of Epitaxial Graphene on 6H-SiC(0001) Surface

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

In situ atomic-scale observation of monolayer graphene growth from SiC

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

In situ study on the electronic structure of graphene grown on 6H-SiC (0 0 0 1 ̄) with synchrotron radiation photoelectron spectroscopy

Raman spectra and infrared intensities of graphene-like clusters in compared to epitaxial graphene on Si

Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition

Er intercalation and its impact on transport properties of epitaxial graphene