Abstract:Epitaxial growth is a promising strategy to produce high-quality graphene samples. At the same time, this method has great flexibility for industrial scale-up. To optimize growth protocols, it is essential to understand the underlying growth mechanisms. This is, however, very challenging, as the growth process is complicated and involves many elementary steps. Experimentally, atomic-scale in situ characterization methods are generally not feasible at the high temperature of graphene growth. Therefore, kinetics is the main experimental information to study growth mechanisms. Theoretically, first-principles calculations routinely provide atomic structures and energetics but have a stringent limit on the accessible spatial and time scales. Such gap between experiment and theory can be bridged by atomistic simulations using first-principles atomic details as input and providing the overall growth kinetics, which can be directly compared with experiment, as output. Typically, system-specific approximations should be applied to make such simulations computationally feasible. By feeding kinetic Monte Carlo (kMC) simulations with first-principles parameters, we can directly simulate the graphene growth process and thus understand the growth mechanisms. Our simulations suggest that the carbon dimer is the dominant feeding species in the epitaxial growth of graphene on both Cu(111) and Cu(100) surfaces, which enables us to understand why the reaction is diffusion limited on Cu(111) but attachment limited on Cu(100). When hydrogen is explicitly considered in the simulation, the central role hydrogen plays in graphene growth is revealed, which solves the long-standing puzzle into why H should be fed in the chemical vapor deposition of graphene. The simulation results can be directly compared with the experimental kinetic data, if available. Our kMC simulations reproduce the experimentally observed quintic-like behavior of graphene growth on Ir(111). By checking the simulation results, we find that such nonlinearity is caused by lattice mismatch, and the induced growth front inhomogeneity can be universally used to predict growth behaviors in other heteroepitaxial systems. Notably, although experimental kinetics usually gives useful insight into atomic mechanisms, it can sometimes be misleading. Such pitfalls can be avoided via atomistic simulations, as demonstrated in our study of the graphene etching process. Growth protocols can be designed theoretically with computational kinetic and mechanistic information. By contrasting the different activation energies involved in an atom-exchange-based carbon penetration process for monolayer and bilayer graphene, we propose a three-step strategy to grow high-quality bilayer graphene. Based on first-principles parameters, a kinetic pathway toward the high-density, ordered N doping of epitaxial graphene on Cu(111) using a CNCl precursor is also identified. These studies demonstrate that atomistic simulations can unambiguously produce or reproduce the kinetic information on graphene growth, which is pivotal to understanding the growth mechanism and designing better growth protocols. A similar strategy can be used in growth mechanism studies of other two-dimensional atomic crystals.

Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition

Molecular Dynamics Simulation of Chemical Vapor Deposition Graphene Growth on Ni (111) Surface

New Insight into the Metal-Catalyst-Free Direct Chemical Vapor Deposition Growth of Graphene on Silicon Substrates

Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential

Large Scale Atomistic Simulation of Single-Layer Graphene Growth on Ni(111) Surface: Molecular Dynamics Simulation Based on a New Generation of Carbon-Metal Potential.

Optimized growth of graphene on SiC: from the dynamic flip mechanism.

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by Sic Buffer Layers

Atomistic Simulations of Graphene Growth: From Kinetics to Mechanism.

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Atom-By-Atom Simulations of Graphene Growth by Decomposition of Sic (0001): Impact of the Substrate Steps

Nucleation of Epitaxial Graphene on Sic Substrate by Thermal Annealing and Chemical Vapor Deposition

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Atomic Mechanism for the Growth of Wafer-Scale Single-Crystal Graphene: Theoretical Perspective and Scanning Tunneling Microscopy Investigations

In situ atomic-scale observation of monolayer graphene growth from SiC

Graphene-Induced in Situ Growth of Monolayer and Bilayer 2D SiC Crystals Toward High-Temperature Electronics

Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

Atomistic Insights into Chemical Vapor Deposition Process of Preparing Silicon Carbide Materials Using ReaxFF-MD Simulation

Atom-resolved study of CVD graphene on Rh substrates and its intriguing properties by STM / STS

Controllable growth of vertically aligned graphene on C-face SiC

The Mechanism of Graphene Vapor–Solid Growth on Insulating Substrates