Abstract:The characterization of defects in semiconductor materials and devices is crucial for enhancing the performance and reliability of semiconductor products. This tutorial review focuses on Deep Level Transient Spectroscopy (DLTS) as the primary analytical tool, thoroughly discussing its distinct advantages in deep-level defect characterization. However, it is unable to reveal the concentration-depth distribution of deep-level defects, neglects the dependency of carrier emission rates on the electric field, and fails to accurately identify defect structures. To overcome these limitations, two enhanced DLTS techniques have been developed to extend the capabilities of DLTS. These enhancements include the utilization of graded fill pulse technology to accurately map defect distributions at various depths within devices, facilitating individual defect characterization across different layers of multilayered structures; the application of varying electric field strengths to samples to delve into the intricate physical mechanisms of defects during carrier emission processes; and the adjustment of the duration of electric pulse injection to monitor signal growth trends, deducing the microstructure of defects. The paper integrates research findings from a wide array of field experts, meticulously outlines a description of how to obtain the depth distribution of defect concentration in devices, furnishes quantitative criteria for both the Poole-Frenkel effect and phonon-assisted tunneling mechanisms of carrier emission, and provides specific examples for distinguishing between interface states/bulk defects and point defects/extended defects. This enhances both the theoretical and practical knowledge in this field. The advanced DLTS techniques outlined provide crucial guidance for defect characterization and performance optimization in semiconductor devices with new structures and materials.

Interfacial Defects Related to the Substrate Treatment in Molecular Beam Epitaxial Silicon

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Detection of Defects at Homoepitaxial Interface by Deep-Level Transient Spectroscopy

Studies of defect states in the interface between SiO2 and a-Si:H films

Interfacial Defects In Si1-Xgex/Si Quantum-Wells Detected By Deep-Level Transient Spectroscopy

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

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Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Interstitial-Carbon Defects In Si1-Xgex

Deep-Level Transient Spectroscopy Study On Direct Silicon Bonded (110)/(100) Interfacial Grain Boundary

(Invited) Defects in Cast-Mono Crystalline Silicon

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Preface of 16th International Conference on Defects, Recognition, Imaging and Physics in Semiconductors

Investigation of interaction between defects in Si by means of monitoring point defect fluxes

Deep-level Transient Spectroscopy Study on Direct Silicon Bonded (1 1 0)/(1 0 0) Interfacial Grain Boundary

Characterization Study of Deep-Level Defect Spatial Distribution, Emission Mechanisms, and Structural Identification

DEEP LEVELS IN ELECTRON-IRRADIATED SILICON CONTAINING LITHIUM

A Deep Level Transient Spectroscopic Study of Boron-Ion-implanted Single Quantum Wells

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Defects Induced by P+-Implanted in Silicon

Toward Defect-Free Doping by Self-Assembled Molecular Monolayers: The Evolution of Interstitial Carbon-Related Defects in Phosphorus-Doped Silicon.