Abstract:The characterization of defects in semiconductor materials and devices is crucial for enhancing the performance and reliability of semiconductor products. This tutorial review focuses on Deep Level Transient Spectroscopy (DLTS) as the primary analytical tool, thoroughly discussing its distinct advantages in deep-level defect characterization. However, it is unable to reveal the concentration-depth distribution of deep-level defects, neglects the dependency of carrier emission rates on the electric field, and fails to accurately identify defect structures. To overcome these limitations, two enhanced DLTS techniques have been developed to extend the capabilities of DLTS. These enhancements include the utilization of graded fill pulse technology to accurately map defect distributions at various depths within devices, facilitating individual defect characterization across different layers of multilayered structures; the application of varying electric field strengths to samples to delve into the intricate physical mechanisms of defects during carrier emission processes; and the adjustment of the duration of electric pulse injection to monitor signal growth trends, deducing the microstructure of defects. The paper integrates research findings from a wide array of field experts, meticulously outlines a description of how to obtain the depth distribution of defect concentration in devices, furnishes quantitative criteria for both the Poole-Frenkel effect and phonon-assisted tunneling mechanisms of carrier emission, and provides specific examples for distinguishing between interface states/bulk defects and point defects/extended defects. This enhances both the theoretical and practical knowledge in this field. The advanced DLTS techniques outlined provide crucial guidance for defect characterization and performance optimization in semiconductor devices with new structures and materials.

Detection of Defects at Homoepitaxial Interface by Deep-Level Transient Spectroscopy

Interfacial Defects Related to the Substrate Treatment in Molecular Beam Epitaxial Silicon

Interfacial Defects In Si1-Xgex/Si Quantum-Wells Detected By Deep-Level Transient Spectroscopy

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Numerical Fitting of Transient Decays in the High Defect Density Limit

To define nonradiative defects in semiconductors: An accurate DLTS simulation based on first-principle

Characterization Study of Deep-Level Defect Spatial Distribution, Emission Mechanisms, and Structural Identification

Deep-Level Transient Spectroscopy Study On Direct Silicon Bonded (110)/(100) Interfacial Grain Boundary

Deep-level Transient Spectroscopic Studies of ZnSe - GaAs Heterointerfaces

Profiling the Deep Levels in Sige/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy

Deep-level Transient Spectroscopy Study on Direct Silicon Bonded (1 1 0)/(1 0 0) Interfacial Grain Boundary

Defect identification based on first-principles calculations for deep level transient spectroscopy

Electrically Active Defects in Ni-Si Silicide Studied by Deep-Level Transient Spectroscopy

A Deep Level Transient Spectroscopic Study of Boron-Ion-implanted Single Quantum Wells

Profiling the Deep Trap Level in the Semiconductor Heterostructures by Small-Pulse Deep-Level Transient Spectroscopy

DLTS Study of Defects in HgCdTe Heterostructure Photodiode

Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Detection of Defects on the Surface of a Semiconductor by Terahertz Surface Plasmon Polaritons.

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport