Abstract:Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900–1200°C; the normal isothermal e-beam anneals, together with sub-second fast anneals and ‘dual-pulse’ anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature in less than 0.5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model. Defects remaining in diodes fabricated with the forementioned implants after these anneal cycles have been studied using DLTS techniques. Trap densities for the three types of e-beam anneal are comparable to those for furnace annealed diodes, as are the reverse leakage currents measured (typically 2–5nA for a 0.85mm2 diode at −5V).

Electrically Active Defects in Ni-Si Silicide Studied by Deep-Level Transient Spectroscopy

Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Defects in nitrogen-doped multicrystalline silicon

Electron irradiation-induced defects in lithium doped n-type silicon with different oxygen concentrations

I – V – T Studies on Ni-silicide/n-Si(100) Contacts Formed by Ti–Ni–Si Solid State Reaction

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy

Evolution of secondary defects in arsenic implanted Si

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Real-Time TEM Observation of the Role of Defects on Nickel Silicide Propagation in Silicon Nanowires

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Ni/Si Solid Phase Reaction Studied by Temperature-Dependent Current-Voltage Technique

Nickel Silicide Formation on Shallow Junctions

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Lithium Diffusion in Silicon and Induced Structure Disorder: A Molecular Dynamics Study

Annealing Process Influence And Dopant-Silicide Interaction In Self-Aligned Nisi Technology