Abstract:Using metal oxides to form a carrier-selective interface on crystalline silicon (c-Si) has recently generated considerable interest for use with c-Si photovoltaics because of the potential to reduce cost. n-type oxides, such as MoO3, V2O5, and WO3, have been widely studied. In this work, a p-type oxide, Cu-doped NiO (NiO:Cu), is explored as a transparent hole-selective contact to n-Si. An ultrathin SiOx layer, fabricated by a wet-chemical method (wet-SiOx), is introduced at the NiO:Cu/n-Si interface to achieve a tunnelling junction solar cell. Interestingly, it was observed that the interface quality of the NiO:Cu/wet-SiOx/n-Si heterojunction was dramatically enhanced by post-deposition annealing (PDA) at a temperature of 200 degrees C. Our device exhibits an improved power conversion efficiency of 10.8%, which is the highest efficiency among NiO/Si heterojunction photo-electric devices to date. It is demonstrated that the 200 degrees C PDA treatment enhances the built-in field by a reduction in the interface density of states (Dit) but does not influence the work function of the NiO:Cu thin layer. This stable work function after the PDA treatment is in conflict with the changed built-in field according to the Schottky model. Thus, the Bardeen model is introduced for this physical insight:the enhancement of the built-in field originates from the unpinning of the Fermi levels of NiO:Cu and n-Si by the interface state reduction. Published by AIP Publishing.

Annealing Process Influence And Dopant-Silicide Interaction In Self-Aligned Nisi Technology

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

Effects of Ni Film Thickness on the Properties of Ni-Based Silicides Formed on Both Highly Doped N- and P-Si Substrate

Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy

Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

Design consideration of ion implantation in dopant segregation technique at NiSi/Si interface

Ti-capping and heating ramp-rate effects on Ni-silicide film and interface

Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance

Linear Growth of Ni2si Thin Film on N+/P Junction at Low Temperature

Study of nickel silicide formation on Si(1 1 0) substrate

X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions

Study of Nickel Silicide Formation on Si(110) Substrate

The material characterization of nickel germanosilicides on SiGe/Si substrate and the contact size effect on Schottky diodes

Interaction of NiSi with dopants for metallic source/drain applications

Dopant Redistribution Induced by Ni Silicidation at 300°C

On The Annealing-Induced Enhancement Of The Interface Properties Of Nio:Cu/Wet-Siox/N-Si Tunnelling Junction Solar Cells

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Electrical Characterization of Nisi/Si Interfaces Formed by A Single and A Two-Step Rapid Thermal Silicidation

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering