Abstract:A pulsed laser annealing method is applied to synthesize nickel silicide (NiSi) as a contact material. With the integration of NiSi into p‐channel MOSFET and n‐channel MOSFET devices, the on/off ratio improves and the field‐effect mobility increases because of a reduction in contact resistance.. In addition, the gains of the CMOS inverter are improved and the static noise margin of 6T‐SRAM is also increased. A pulsed laser annealing method is utilized to directly synthesize nickel silicide (NiSi) as a contact material to improve the contact of electric devices. Three laser wavelengths, 355 nm (ultraviolet laser), 532 nm (green laser), and 1064 nm (infrared laser), are used for the NiSi synthesis during the pulsed laser annealing process. A NiSi phase with low sheet resistance is formed by an ultraviolet laser annealing (ULA) process without damaging the polyimide (PI) substrate. With the integration of the ULA process‐induced NiSi into p‐nnel MOSFET (PMOS) and n‐channel MOSFET (NMOS) devices, the on/off ratio improves significantly, and the field‐effect mobility increases by 30% because of the reduction in contact resistance from 21 to 8.5 kΩ. In addition to the PMOS and NMOS, the gains of the CMOS inverter at different Vdd values are improved by at least 30%. Moreover, the static noise margin of 6T‐SRAM is elevated from 0.82 to 1 V at Vdd = 4 V. The ability of the ULA process to synthesize a high‐quality NiSi layer on a flexible substrate is demonstrated. The integration of NiSi into electrical devices offers a new pathway for improving the electrical behavior of flexible devices.

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

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Nickel-Based Contact Metallization For Sige Mosfets: Progress And Challenges

Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate

Linear Growth of Ni2si Thin Film on N+/P Junction at Low Temperature

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

Omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

Characterization of Ni(Si,Ge) Films on Epitaxial SiGe(100) Formed by Microwave Annealing

Morphological And Phase Stability Of Nickel-Germanosilicide On Si1-Xgex Under Thermal Stress

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on $\Hbox{si}_{1-X}\hbox{ge}_{x}$ Epilayer on Si Substrates

Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization

Silicide Formation by Furnace Annealing of Thin Si Films on Large-Grained Ni Substrates

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Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

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The material characterization of nickel germanosilicides on SiGe/Si substrate and the contact size effect on Schottky diodes