Abstract:The material and electrical characterization of nickel germanides on pure n-(100) Ge are investigated in this paper. The nickel germanides were achieved by rapid thermal annealing (RTA) in N2 ambient for 60s at different temperature. And X-ray diffraction (XRD) and Raman measurements were used to determine the crystal phase of Ni germanides. The results show that the ion implantation of BF2 before germanidation is favorable for the formation of low-resistivity monogermanide phase (NiGe). Ni-rich germanide phase exists when annealed at 300°C for pure-Ge without BF2 implantation, while only NiGe is formed for that with BF2 implantation. As a result, the sheet resistance of the film annealed at 300°C is ∼9.6Ω/□ and ∼3.8Ω/□ for the samples without/with BF2 implantation, respectively. Besides, we firstly observed the Raman peak at ∼217cm-1 corresponding to NiGe, which has not been reported till now. In addition, it is also experimentally demonstrated that the Ti-capping layer technique is beneficial to better surface morphology. Furthermore, the electrical characteristics of NiGe/pure-Ge Schottky diodes is presented. The strong dependence of Schottky barrier height (Φb) and the ideality factor (n) on the contact hole size is also firstly observed through the experiments. When annealed at 400°C, the Schottky barrier height (Φb) of Schottky diodes formed on pure-Ge substrate decreases from 0.53eV to 0.42eV with the contact size decreasing, while the ideality factor(n) increases remarkably, which may provide the guideline for the application to Schottky source/drain germanium transistors.

The material characterization of nickel germanosilicides on SiGe/Si substrate and the contact size effect on Schottky diodes

A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on $\Hbox{si}_{1-X}\hbox{ge}_{x}$ Epilayer on Si Substrates

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

Impact of ion implantation on nickel germanides formation with pure-Ge substrate and the electrical dependence of NiGe/Ge schottky diode on contact size

Pt interlayer effects on Ni germanosilicide formation and contact properties

Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

Fabrication and Characteristics of Ni-Germanide Schottky Contacts with Ge

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Study of nickel silicide formation on Si(1 1 0) substrate

Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

Study of Nickel Silicide Formation on Si(110) Substrate

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts

Schottky Barrier Height Inhomogeneities of Nickel Mono-Silicide/N-Si Contact Studied by I-V-T Technique

Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

Schottky Barrier Height Modulation of Nickel Germanide Schottky Diodes by the Germanidation-Induced Dopant Segregation Technique

The Modulation of Schottky Barrier Height of NiSi/n-Si Schottky Diodes by Silicide As Diffusion Source Technique

Thermal Stability of Ni(Zr)Si Silicide and Ni(Zr)Si/Si Schottky Diode

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

Annealing Process Influence And Dopant-Silicide Interaction In Self-Aligned Nisi Technology