Abstract:The material and electrical characterization of nickel germanides on pure n-(100) Ge are investigated in this paper. The nickel germanides were achieved by rapid thermal annealing (RTA) in N2 ambient for 60s at different temperature. And X-ray diffraction (XRD) and Raman measurements were used to determine the crystal phase of Ni germanides. The results show that the ion implantation of BF2 before germanidation is favorable for the formation of low-resistivity monogermanide phase (NiGe). Ni-rich germanide phase exists when annealed at 300°C for pure-Ge without BF2 implantation, while only NiGe is formed for that with BF2 implantation. As a result, the sheet resistance of the film annealed at 300°C is ∼9.6Ω/□ and ∼3.8Ω/□ for the samples without/with BF2 implantation, respectively. Besides, we firstly observed the Raman peak at ∼217cm-1 corresponding to NiGe, which has not been reported till now. In addition, it is also experimentally demonstrated that the Ti-capping layer technique is beneficial to better surface morphology. Furthermore, the electrical characteristics of NiGe/pure-Ge Schottky diodes is presented. The strong dependence of Schottky barrier height (Φb) and the ideality factor (n) on the contact hole size is also firstly observed through the experiments. When annealed at 400°C, the Schottky barrier height (Φb) of Schottky diodes formed on pure-Ge substrate decreases from 0.53eV to 0.42eV with the contact size decreasing, while the ideality factor(n) increases remarkably, which may provide the guideline for the application to Schottky source/drain germanium transistors.

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Solid-Phase Reaction Between Co, Ni/n-poly-Si0.84Ge0.16 and Schottky Barrier Properties of the Formed Contacts

Solid-Phase Reaction And Schottky Contact Properties Of Co/N-Poly-Si0.84ge0.16/N-Si(100)

Pt interlayer effects on Ni germanosilicide formation and contact properties

The inhomogeneity of Co/p-poly-Si/sub 0.84/Ge/sub 0.16/ Schottky contact

The inhomogeneity of Co/p-poly-Si0.84Ge0.16 Schottky contact

Fabrication and Characteristics of Ni-Germanide Schottky Contacts with Ge

Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

NI Germanide Schottky contact with GE

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Schottky Barrier Characteristics of Ternary Silicide Co1−xNixSi2 on N-Si(1 0 0) Contacts Formed by Solid Phase Reaction of Multilayer

Schottky Barrier Height Inhomogeneities of Nickel Mono-Silicide/N-Si Contact Studied by I-V-T Technique

Impact of ion implantation on nickel germanides formation with pure-Ge substrate and the electrical dependence of NiGe/Ge schottky diode on contact size

Studies of Ti- and Ni-Germanide Schottky Contacts on N-Ge(100) Substrates

The material characterization of nickel germanosilicides on SiGe/Si substrate and the contact size effect on Schottky diodes

Electrical Properties of PolySiGe Grown by Metal-Induced Growth

Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

Al/Si/Ge/Si Schottky contacts with controllable barrier heights

Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

Modulation Of Schottky Barrier Height For Nisi/Si(110) Diodes Using An Antimony Interlayer