Abstract:Ni and Ni(Pt) germanosilicide formation and their contact properties on n-type epitaxial Si0.84Ge0.16 have been studied in this work. It is revealed that compared to NiSi, NiSiGe has enhanced phase stability but worse morphology stability. It is also found that Pt incorporation in germanosilicidation improves the morphology of the germanosilicide film. The Schottky contact characteristics of NiSiGe and Ni(Pt)SiGe on n-SiGe were evaluated by current–voltage (I–V) technique at room temperature. NiSiGe/n-SiGe contact shows a Schottky barrier height (SBH) of 0.65eV with little difference from that of NiSi/n-Si contact. However, the contact shows a reduced SBH with a markedly increased ideality factor and leakage current when annealing temperature increases to 650°C, indicating thermal degradation of the contact quality. Pt incorporation increases the SBH to 0.73eV. In addition, its diode parameters such as SBH, ideality factor, and reverse leakage show better conformity during the whole annealing temperature range (from 450 to 650°C). Therefore, it is concluded that Pt interlayer between Ni and SiGe can modulate the barrier height of Ni germanosilicide and improve its contact properties.

Al/Si/Ge/Si Schottky contacts with controllable barrier heights

Properties Of Schottky Contact Of Al On Sige Alloys

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of Geoxny for Al/N-Ge(100) Contact

Solid-Phase Reaction Between Co, Ni/n-poly-Si0.84Ge0.16 and Schottky Barrier Properties of the Formed Contacts

Pt Schottky Contact on Modulation-doped AlxGal-xN/GaN Heterostructure

The inhomogeneity of Co/p-poly-Si0.84Ge0.16 Schottky contact

The inhomogeneity of Co/p-poly-Si/sub 0.84/Ge/sub 0.16/ Schottky contact

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Solid-Phase Reaction And Schottky Contact Properties Of Co/N-Poly-Si0.84ge0.16/N-Si(100)

Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability

TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ Cm2 Contact Resistivities to P-Sige

The Impact of the Surface Treatments on the Properties of Gan/3c-Sic/Si Based Schottky Barrier Diodes

Pt interlayer effects on Ni germanosilicide formation and contact properties

Pt/Au Schottky Contacts to Modulation-Doped AlxGa1-xN/GaN Heterostructures Using Pre-deposition Surface Treatment

Effect of Surface Treatments on Schottky Contact on N-Alxga1−xn/gan Heterostructures

Investigation of Ni(Pt)/Si-cap/SiGe Solid Phase Reaction

Modulation and Extraction of Schottky Barrier Height for Advanced Source/Drain Contact