Abstract:High-quality AlInGaN film grown by metal organic chemical vapor deposition is realized by fabricating the AlGaN/InGaN short-period superlattices, and then, Schottky contacts are fabricated on the AlInGaN superlattices. The crystal quality of AlInGaN superlattice samples is characterized by X-ray diffraction and scanning electron microscopy, and the correlation between the compositions of AlInGaN and growth condition is further clarified. The current transport mechanisms of the Pt/Au Schottky contacts to AlInGaN superlattice samples with different background carrier concentrations are studied by current–voltage (I – V) characteristics and theory analysis based on the thermionic emission (TE) and thermionic field emission (TFE) models. It is found that the results obtained from the TE and TFE models are almost identical for the Schottky contact to strain-balanced AlInGaN sample with low background carrier concentration, indicating that the thermionic emission is a dominant current transport mechanism. However, the Schottky contacts fabricated using high background carrier concentration AlInGaN samples demonstrate degraded barrier characteristics due to an occurrence of donor-like defects which result in the defect-assisted tunneling current, and thus, the combination of tunneling transport and thermionic emission constitutes the current transport mechanisms in Schottky contacts.

Effect of Surface Treatments on Schottky Contact on N-Alxga1−xn/gan Heterostructures

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Pt/Au Schottky Contacts to Modulation-Doped AlxGa1-xN/GaN Heterostructures Using Pre-deposition Surface Treatment

Pt Schottky Contact on Modulation-doped AlxGal-xN/GaN Heterostructure

Influence and Mechanism of Surface Treatment on Ohmic Contacts to AlGaN Surface

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

The Annealing Effect Of Schottky Contact On Algan/Gan

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures

Improved Surface Characteristics and Contact Performance of Epitaxial P-Algan by a Chemical Treatment Process

Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of Geoxny for Al/N-Ge(100) Contact

Current Transport Mechanisms in Pt/Au Schottky Contacts to AlInGaN Using AlGaN/InGaN Short-Period Superlattices

The Impact of the Surface Treatments on the Properties of Gan/3c-Sic/Si Based Schottky Barrier Diodes

The Effect of Wet Chemical Etching by KOH Solution to the Contact on the Solar-Blind Al 0.65 Ga 0.35 N Material

Effects of Surface Chemical Treatment and Annealing on P-Gan/zno: Ga Contact

Investigation of Ohmic Contact to Plasma-Etched N-Al0.5ga0.5n by Surface Treatment

Ti/Al/Pt/Au and Al Ohmic Contacts on Si-Substrated Gan

Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2O3 films on GaAs substrates

Surface States in the Alxga1-Xn Barrier in Alxga1-Xn/Gan Heterostructures