Abstract:The issue of contacts between the electrode and channel layer is crucial for wide-bandgap semiconductors, especially the β-Ga2O3 due to its ultra-large bandgap (4.6-4.9 eV). It affects the device performance greatly and thus needs special attention. In this work, the high-performance β-Ga2O3 nanobelt field-effect transistors with Ohmic contact between multilayer metal stack Ti/Al/Ni/Au (30/120/50/50 nm) and unintentionally doped β-Ga2O3 channel substrate have been fabricated. The formation mechanism of Ohmic contacts to β-Ga2O3 under different annealing temperatures in an N2 ambient is systematically investigated by X-ray photoelectron spectroscopy. It is revealed that the oxygen vacancies at the interface of β-Ga2O3/intermetallic compounds formed during rapid thermal annealing are believed to induce the good Ohmic contacts with low resistance. The contact resistance (Rc) between electrodes and unintentionally doped β-Ga2O3 reduces to ∼9.3 Ω mm after annealing. This work points to the importance of contact engineering for future improved β-Ga2O3 device performance and lays a solid foundation for the wider application of β-Ga2O3 in electronics and optoelectronics.

The Effect of Wet Chemical Etching by KOH Solution to the Contact on the Solar-Blind Al 0.65 Ga 0.35 N Material

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Electrical Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to N-Type GaN

Investigation of Ohmic Contact to Plasma-Etched N-Al0.5ga0.5n by Surface Treatment

Influence and Mechanism of Surface Treatment on Ohmic Contacts to AlGaN Surface

Improved Ohmic Contacts to Plasma Etched High Al Fraction N-Algan by Active Surface Pretreatment

Effect of Surface Treatments on Schottky Contact on N-Alxga1−xn/gan Heterostructures

Ti/Al/Pt/Au and Al Ohmic Contacts on Si-Substrated Gan

Application of Wet Chemical Etching in GaN-based Materials

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

Improved Surface Characteristics and Contact Performance of Epitaxial P-Algan by a Chemical Treatment Process

The Annealing Effect Of Schottky Contact On Algan/Gan

Investigation of MBE grown high Al concentration AlGaN ohmic contact

Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to Β-Ga2o3 Nanobelt Field-Effect Transistors.

Study of Ti/Au, Ti/Al/Au, a nd Ti/Al/Ni/Au ohmic co ntacts to n-GaN

Effects of Surface Pretreatments on P-Gan/gzo Contact by Rf Magnetron Sputter

Improved Ohmic-contact to AlGaN/GaN Using Ohmic Region Recesses by Self-Terminating Thermal Oxidation Assisted Wet Etching Technique

Effects of Surface Chemical Treatment and Annealing on P-Gan/zno: Ga Contact

Ohmic Contact Performance Between Ti/Al/Ti/Au and AlGaN