Abstract:The realization of ohimic contact to n-GaN is usually achieved by using Ti/Al bilayer electrodes with high temperature annealing. Nevertheless, the process of high temperature annealing may destruct the (electronic) structure of devices, such as quantum well and superlattice structure. The ultimate objective of this research work is to obtain low resistance ohimic contact to n-GaN without high temperature annealing, thus (avoiding) the destruction of electronic structure effectively. In the research both nonalloyed condition and low temperature annealing are applied. Under nonalloyed condition, we firstly use alloyed TiAl_3 as contact electrode material directly on n-GaN with carrier concentration of 2×10~(18) cm~(-3). Compared with conventional Ti/Al bilayer structure, alloyed TiAl_3 structure facilitates the realization of nonalloyed n-type ohmic contact. However, with annealing at 500 ℃, the contact behavior of Ti/Al bilayer is improved rapidly and achieves ohmic, which is lower than the temperature assumed in some papers. After applying RIE process, both Ti/Al bilayer and TiAl_3 alloyed electrodes behave ohmic, which indicates that the surface of GaN is cleaning, thus intimate contact of Ti and GaN is vital to (achieve) ohmic contact to n-GaN. In the further experiment, Ti/TiAl_3 bilayer structure is introduced to compare with TiAl_3 alloyed structure. Both of the two structures behave ohmic with RIE process, yet TiAl_3 alloyed shows lower contact resistance, and excess Ti has no obvious effect to contact behavior under nonalloyed condition. After annealing with different temperature, Ti/TiAl_3 bilayer structure tends to form an ohmic contact with lower contact resistance. It proves that excess Ti is activated to form ohmic contact at high temperature annealing. Further analysis implies both of the nitrogen vacancies and TiAl_3 mechanisms play a critical role to form a low contact resistance ohmic contact to n-GaN, under the condition of nonalloyed or low annealing temperature. Accordingly, based on alloyed TiAl_3 structure, Ti/TiAl_3/Ni/Au structure is designed, which decreases the contact resistance significantly, and the specific contact resistance of 3×10~(-5) Ω·cm~2 is obtained with CTLM measurement.The introduction of TiAl_3 alloyed material can make a role as high temperature annealing in the aspect of forming TiAl_3 at the interface. With a certain thickness ratio, Ti/TiAl_3 can achieved low ohmic contact with low temperature annealing. Therefore, TiAl_3 alloyed will be promising in the application field of photoelectron and micro-electron devices that require strict temperature conditions.

Investigation of MBE grown high Al concentration AlGaN ohmic contact

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

Structural Characterization of V/Al/V/Au Ohmic Contacts to N-Type Al0.4ga0.6n

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN

The Dichotomous Role of Oxygen in the Ohmic Contact Formation on P-Type GaN Grown by MBE and MOCVD

Ohmic Contact to AlGaN/GaN HEMT with Electrodes in Contact with Heterostructure Interface

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

Ti/Al/Pt/Au and Al Ohmic Contacts on Si-Substrated Gan

Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

Metal/n-AlGaN Ohmic Contact

Mechanism of Ohmic Contact Formation in AlGaN/GaN High Electron Mobility Transistors Using Microwave Annealing

The Annealing Effect Of Schottky Contact On Algan/Gan

Investigation of Ohmic Contact to Plasma-Etched N-Al0.5ga0.5n by Surface Treatment

Realization of Nonalloyed TiAl3 and Ti/TiAl3 Ohmic Contact to N-Gan

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Fabrication and Formation Mechanisms of Ohmic Conducts with Low Annealing Temperature for GaN/AlN Superlattice Barrier HEMTs

Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP

Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to Β-Ga2o3 Nanobelt Field-Effect Transistors.

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures