Abstract:This Letter reports low-temperature (700 °C) growth of heavily Si-doped GaN (n ++ GaN) by metal-organic chemical vapor deposition with a resistivity as low as 1.9 × 10 −4 Ω·cm and an atomically smooth surface. Indium adatoms added during the growth of n ++ GaN play an important role in improving both the surface morphology and free electron concentration. On the one hand, acting as surfactant, they greatly boost the adatoms surface mobility at low growth temperature and mitigate Si-induced anti-surfactant effect. On the other hand, they can effectively suppress the formation of compensating defects, thus contributing to an extremely high electron concentration of 2.8 × 10 20 cm −3 . This high-quality n ++ GaN was further applied to the realization of Ohmic contacts with an ultra-low contact resistance for AlGaN/GaN high electron mobility transistors. The carrier gas was carefully modulated for the selective area epitaxy (SAE) of n ++ GaN to facilitate the nucleation of GaN on the dielectric mask, which effectively suppressed the undesired mass transport and resulted in a uniform SAE of n ++ GaN in the recessed source/drain regions. A nearly defect-free interface between the n ++ GaN and two-dimensional electron gas channel has been also realized, and the resistance induced by the interface was only 0.03 Ω·mm. As a result, an ultra-low contact resistance of 0.07 Ω·mm has been realized. This work lays a solid foundation for further improving the performance of GaN-based RF and power devices.

Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

Mechanism of Ohmic Contact Formation in AlGaN/GaN High Electron Mobility Transistors Using Microwave Annealing

Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT

Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Low Contact Resistance CMOS-Compatible RF GaN-on-Silicon HEMTs

Improving Performance of Al2O3/AlN/GaN MOSC-HEMTs Via Microwave Annealing

Low Surface Damage During Ohmic Contact Formation in AlGaN/GaN HEMT by Selective Laser Annealing

Investigation of MBE grown high Al concentration AlGaN ohmic contact

Improved Ohmic-contact to AlGaN/GaN Using Ohmic Region Recesses by Self-Terminating Thermal Oxidation Assisted Wet Etching Technique

Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact with Laser Annealing

Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Forming Gas Annealing

Si-implantation for Low Ohmic Contact Resistances in RF GaN HEMTs

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE

Ohmic Contact Formation of Ti/Al/Ni/Au to N-Gan by Two-Step Annealing Method

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

High thermal stability Ohmic contact for GaN-based devices